Electron transport analysis of 4H-SiC with full-band Monte Carlo simulation including real-space Coulomb interactions

Chi-Yin Cheng; Dragica Vasileska

doi:10.1063/1.5144214

Electron transport analysis of 4H-SiC with full-band Monte Carlo simulation including real-space Coulomb interactions

Journal of Applied Physics ◽

10.1063/1.5144214 ◽

2020 ◽

Vol 127 (15) ◽

pp. 155702 ◽

Cited By ~ 2

Author(s):

Chi-Yin Cheng ◽

Dragica Vasileska

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Real Space ◽

Coulomb Interactions ◽

Full Band ◽

Transport Analysis

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Static and Transient Simulation of 4H-SiC VDMOS Using Full-Band Monte Carlo Simulation That Includes Real-Space Treatment of the Coulomb Interactions

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3007368 ◽

2020 ◽

Vol 67 (9) ◽

pp. 3705-3710 ◽

Cited By ~ 1

Author(s):

Chi-Yin Cheng ◽

Dragica Vasileska

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Real Space ◽

Transient Simulation ◽

Coulomb Interactions ◽

Full Band

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Investigation of temperature effects on electron transport in SiC using unique full band Monte Carlo simulation

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984566 ◽

2002 ◽

Cited By ~ 1

Author(s):

G. Pennington ◽

N. Goldsman ◽

S. Scozzie ◽

J.M. McGarrity ◽

B. McLean

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Temperature Effects ◽

Full Band

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Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.537 ◽

2002 ◽

Vol 389-393 ◽

pp. 537-540 ◽

Cited By ~ 2

Author(s):

H.-E. Nilsson ◽

U. Englund ◽

M. Hjelm

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Full Band

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Novel Full-Band Monte Carlo Device Simulator with Real-Space Treatment of the Short-Range Coulomb Interactions for Modeling 4H-SiC Power Devices

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241605 ◽

2020 ◽

Author(s):

Chi-Yin Cheng ◽

Dragica Vasileska

Keyword(s):

Monte Carlo ◽

Short Range ◽

Real Space ◽

Coulomb Interactions ◽

Power Devices ◽

Full Band

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Full band Monte Carlo simulation for temperature-dependent electron transport in gallium nitride

Physica B Condensed Matter ◽

10.1016/s0921-4526(99)00382-8 ◽

1999 ◽

Vol 272 (1-4) ◽

pp. 253-255 ◽

Cited By ~ 1

Author(s):

Y Ando

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Gallium Nitride ◽

Electron Transport ◽

Temperature Dependent ◽

Full Band

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Full band Monte Carlo simulation of electron transport in 6H-SiC

Journal of Applied Physics ◽

10.1063/1.370833 ◽

1999 ◽

Vol 86 (2) ◽

pp. 965-973 ◽

Cited By ~ 20

Author(s):

Hans-Erik Nilsson ◽

Mats Hjelm ◽

Christer Fröjdh ◽

Clas Persson ◽

Ulf Sannemo ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Full Band

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A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact‐ionization model

Journal of Applied Physics ◽

10.1063/1.355849 ◽

1994 ◽

Vol 75 (1) ◽

pp. 297-312 ◽

Cited By ~ 120

Author(s):

T. Kunikiyo ◽

M. Takenaka ◽

Y. Kamakura ◽

M. Yamaji ◽

H. Mizuno ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Band Structure ◽

Impact Ionization ◽

Full Band ◽

Ionization Model ◽

Full Band Structure

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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

IEEE Transactions on Electron Devices ◽

10.1109/16.906448 ◽

2001 ◽

Vol 48 (3) ◽

pp. 535-542 ◽

Cited By ~ 256

Author(s):

M. Farahmand ◽

C. Garetto ◽

E. Bellotti ◽

K.F. Brennan ◽

M. Goano ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Wurtzite Phase

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Monte Carlo Simulation of High-Energy Electron Transport in Silicon: Is There a Short-Cut to Happiness?

Hot Carriers in Semiconductors ◽

10.1007/978-1-4613-0401-2_109 ◽

1996 ◽

pp. 475-480 ◽

Cited By ~ 2

Author(s):

M. V. Fischetti ◽

S. E. Laux ◽

E. Crabbé

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

High Energy ◽

Energy Electron ◽

High Energy Electron

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A Monte-Carlo Simulation of the Behaviour of Electron Swarms in Hydrogen Using an Anisotropic Scattering Model

Australian Journal of Physics ◽

10.1071/ph780299 ◽

1978 ◽

Vol 31 (4) ◽

pp. 299 ◽

Cited By ~ 14

Author(s):

HA Blevin ◽

J Fletcher ◽

SR Hunter

Keyword(s):

Experimental Data ◽

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Anisotropic Scattering ◽

Isotropic Scattering ◽

Transport Parameters ◽

Simulation Code ◽

Scattering Model ◽

Good Agreement

Hunter (1977) found that a Monte-Carlo simulation of electron swarms in hydrogen, based on an isotropic scattering model, produced discrepancies between the predicted and measured electron transport parameters. The present paper shows that, with an anisotropic scattering model, good agreement is obtained between the predicted and experimental data. The simulation code is used here to calculate various parameters which are not directly measurable.

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