Monte Carlo simulation of impact ionization rates in InAlAs-InGaAs square and graded barrier superlattice

1995 ◽  
Vol 31 (10) ◽  
pp. 1826-1834 ◽  
Author(s):  
I. Watanabe ◽  
T. Torikai ◽  
K. Taguchi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Ionization Rates

Impact Ionization for Electrons in Si with Monte Carlo Simulation

1991 ◽  
pp. 527-530 ◽  
Author(s):  
R. Thoma ◽  
H. J. Peifer ◽  
W. L. Engl ◽  
W. Quade ◽  
R. Brunetti ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization

Monte Carlo simulation of impact ionization in GaAs including quantum effects

1983 ◽  
Vol 42 (1) ◽  
pp. 76-78 ◽  
Author(s):  
Yia‐Chung Chang ◽  
D. Z. ‐Y. Ting ◽  
J. Y. Tang ◽  
K. Hess
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Quantum Effects

Impact ionization model for full band Monte Carlo simulation

1994 ◽  
Vol 75 (7) ◽  
pp. 3500-3506 ◽  
Author(s):  
Y. Kamakura ◽  
H. Mizuno ◽  
M. Yamaji ◽  
M. Morifuji ◽  
K. Taniguchi ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Full Band ◽  
Ionization Model

Impact ionization model for full band Monte Carlo simulation in GaAs

1996 ◽  
Vol 79 (5) ◽  
pp. 2473-2480 ◽  
Author(s):  
H. K. Jung ◽  
K. Taniguchi ◽  
C. Hamaguchi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Full Band ◽  
Ionization Model
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