Impact ionization model for full band Monte Carlo simulation in GaAs

1996 ◽  
Vol 79 (5) ◽  
pp. 2473-2480 ◽  
Author(s):  
H. K. Jung ◽  
K. Taniguchi ◽  
C. Hamaguchi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Full Band ◽  
Ionization Model

Impact ionization model for full band Monte Carlo simulation

1994 ◽  
Vol 75 (7) ◽  
pp. 3500-3506 ◽  
Author(s):  
Y. Kamakura ◽  
H. Mizuno ◽  
M. Yamaji ◽  
M. Morifuji ◽  
K. Taniguchi ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Full Band ◽  
Ionization Model

Model of hole-initiated impact-ionization rate in α-quartz for a full band Monte Carlo simulation

2003 ◽  
Vol 94 (2) ◽  
pp. 1096-1104 ◽  
Author(s):  
Tatsuya Kunikiyo ◽  
Kiyoshi Ishikawa ◽  
Yasuo Inoue ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Ionization Rate ◽  
Full Band ◽  
Impact Ionization Rate

A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation

1996 ◽  
Vol 79 (10) ◽  
pp. 7718-7725 ◽  
Author(s):  
Tatsuya Kunikiyo ◽  
Masahiro Takenaka ◽  
Masato Morifuji ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Full Band

An improved impact‐ionization model for high‐energy electron transport in Si with Monte Carlo simulation

1991 ◽  
Vol 69 (4) ◽  
pp. 2300-2311 ◽  
Author(s):  
R. Thoma ◽  
H. J. Peifer ◽  
W. L. Engl ◽  
W. Quade ◽  
R. Brunetti ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
Impact Ionization ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Ionization Model
Sign in / Sign up

Export Citation Format

Share Document