1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)
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Published By Japan Soc. Appl. Phys

0780327454

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Accurate chip scale topography modeling in O(n) run time

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865320 ◽

2005 ◽

Author(s):

K.D. Lucas ◽

X. Li ◽

M. Noell ◽

C.-M. Yuan ◽

A.J. Strojwas

Keyword(s):

Run Time

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A consistent dynamic MOSFET model for low-voltage applications

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865327 ◽

2005 ◽

Cited By ~ 1

Author(s):

G. Schrom ◽

A. Stach ◽

S. Selberherr

Keyword(s):

Low Voltage

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Optical-electronic simulation of a GaAs metal-semiconductor-metal (MSM) photodetector

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865267 ◽

2005 ◽

Cited By ~ 3

Author(s):

T.O. Korner ◽

P.D. Yoder ◽

L.H. Bomholt ◽

W. Fichtner

Keyword(s):

Electronic Simulation ◽

Metal Semiconductor Metal ◽

Msm Photodetector

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Majority and minority mobilities in heavily doped gallium aluminum arsenide for device simulations

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865246 ◽

2005 ◽

Author(s):

H.S. Bennett

Keyword(s):

Aluminum Arsenide ◽

Gallium Aluminum Arsenide ◽

Heavily Doped

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Robust simulation for the hysteresis phenomena of SOI MOSFET's by quasi-transient method

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865296 ◽

2005 ◽

Author(s):

R. Ikeno ◽

K. Asada

Keyword(s):

Transient Method ◽

Hysteresis Phenomena

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Simulation of isothermal current filament states in GaAs structures

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865304 ◽

2005 ◽

Author(s):

A. Vashchenko ◽

Y.B. Martynov ◽

V.F. Sinkevitch

Keyword(s):

Current Filament

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Analysis of boron pile-up at the Si-SiO/sub 2/ interface using 2-D process and device simulation

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865285 ◽

2005 ◽

Author(s):

T. Hyodo ◽

S. Taji ◽

N. Yoshida ◽

M. Kameda ◽

H. Watanabe ◽

...

Keyword(s):

Device Simulation ◽

Pile Up

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Modeling tunneling through ultra-thin gate oxides

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865248 ◽

2005 ◽

Cited By ~ 2

Author(s):

A. Schenk

Keyword(s):

Gate Oxides

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Three dimensional nonlinear viscoelastic oxidation modeling

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865290 ◽

2005 ◽

Cited By ~ 2

Author(s):

S. Cea ◽

M. Law

Keyword(s):

Three Dimensional ◽

Nonlinear Viscoelastic ◽

Oxidation Modeling

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Recursive M-tree method for 3-D adaptive tetrahedral mesh refinement and its application to Brillouin zone discretization

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865277 ◽

2005 ◽

Cited By ~ 2

Author(s):

E.X. Wang ◽

M.D. Giles ◽

Sia Yu ◽

F.A. Leon ◽

A. Hiroki ◽

...

Keyword(s):

Brillouin Zone ◽

Mesh Refinement ◽

Tetrahedral Mesh ◽

Tree Method

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1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Japan Soc. Appl. Phys

Accurate chip scale topography modeling in O(n) run time

A consistent dynamic MOSFET model for low-voltage applications

Optical-electronic simulation of a GaAs metal-semiconductor-metal (MSM) photodetector

Majority and minority mobilities in heavily doped gallium aluminum arsenide for device simulations

Robust simulation for the hysteresis phenomena of SOI MOSFET's by quasi-transient method

Simulation of isothermal current filament states in GaAs structures

Analysis of boron pile-up at the Si-SiO/sub 2/ interface using 2-D process and device simulation

Modeling tunneling through ultra-thin gate oxides

Three dimensional nonlinear viscoelastic oxidation modeling

Recursive M-tree method for 3-D adaptive tetrahedral mesh refinement and its application to Brillouin zone discretization

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)
Latest Publications