Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5- mu m BiCMOS technology for fast 4-Mb SRAM's

1993 ◽  
Vol 40 (6) ◽  
pp. 1121-1128 ◽  
Author(s):  
J.D. Hayden ◽  
J.D. Burnett ◽  
A.K. Perera ◽  
T.C. Mele ◽  
F.W. Walczyk ◽  
...  
1992 ◽  
Vol 39 (8) ◽  
pp. 1865-1869 ◽  
Author(s):  
A. Tamba ◽  
T. Someya ◽  
T. Sakagami ◽  
N. Akiyama ◽  
Y. Kobayashi

1986 ◽  
Vol 7 (12) ◽  
pp. 658-660 ◽  
Author(s):  
H.K. Park ◽  
K. Boyer ◽  
C. Clawson ◽  
G. Eiden ◽  
A. Tang ◽  
...  

1986 ◽  
Vol 33 (11) ◽  
pp. 1853-1854
Author(s):  
E. Crabbe ◽  
J. del Alamo ◽  
R.F.W. Pease ◽  
R.M. Swanson

1988 ◽  
Vol 24 (25) ◽  
pp. 1581 ◽  
Author(s):  
A. Nouailhat ◽  
G. Giroult ◽  
P. Delpech ◽  
A. Gérodolle

2004 ◽  
Vol 48 (12) ◽  
pp. 2243-2249 ◽  
Author(s):  
Armin T. Tilke ◽  
Steffen Rothenhäußer ◽  
Markus Rochel ◽  
Knut Stahrenberg ◽  
Klaus Goller ◽  
...  

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