CMOS-compatible lateral bipolar transistor for BiCMOS technology. II. Experimental results

1992 ◽  
Vol 39 (8) ◽  
pp. 1865-1869 ◽  
Author(s):  
A. Tamba ◽  
T. Someya ◽  
T. Sakagami ◽  
N. Akiyama ◽  
Y. Kobayashi
Keyword(s):  
Bipolar Transistor ◽  
Experimental Results ◽  
Bicmos Technology ◽  
Cmos Compatible

Development of advanced CMOS-compatible bipolar transistor for BiCMOS technology

1988 ◽  
Vol 24 (25) ◽  
pp. 1581 ◽  
Author(s):  
A. Nouailhat ◽  
G. Giroult ◽  
P. Delpech ◽  
A. Gérodolle
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology ◽  
Cmos Compatible

CMOS-compatible lateral bipolar transistor for BiCMOS technology. I. Modeling

1992 ◽  
Vol 39 (4) ◽  
pp. 948-951 ◽  
Author(s):  
N. Akiyama ◽  
A. Tamba ◽  
Y. Wakui ◽  
Y. Kobayashi
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology ◽  
Cmos Compatible

CMOS Compatible Lateral Bipolar Transistor for BiCMOS Technology

1989 ◽  
Author(s):  
N. Akiyama ◽  
A. Tamba ◽  
Y. Wakui ◽  
Y. Kobayashi
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology ◽  
Cmos Compatible

Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5- mu m BiCMOS technology for fast 4-Mb SRAM's

1993 ◽  
Vol 40 (6) ◽  
pp. 1121-1128 ◽  
Author(s):  
J.D. Hayden ◽  
J.D. Burnett ◽  
A.K. Perera ◽  
T.C. Mele ◽  
F.W. Walczyk ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology ◽  
Polysilicon Emitter

scholarly journals A Simplified Spice Model for IGBT

1998 ◽  
Vol 21 (4) ◽  
pp. 279-292 ◽  
Author(s):  
A. Haddi ◽  
A. Maouad ◽  
O. Elmazria ◽  
A. Hoffmann ◽  
J. P. Charles
Keyword(s):  
Equivalent Circuit ◽  
Bipolar Transistor ◽  
Experimental Results ◽  
Insulated Gate Bipolar Transistor ◽  
Spice Model ◽  
Safe Operating ◽  
Good Agreement ◽  
Latch Up

A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific phenomena limiting its SOA (Safe Operating Area), such as forward and reverse biased SOA, as well as latch-up. The validity of this model is confirmed by comparison between simulation and experimental results as well as the data sheets. This comparison is tested for two IGBT devices showing two different powers and switching speeds, and a good agreement is recorded for both IGBT devices.

Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs

2004 ◽  
Vol 48 (12) ◽  
pp. 2243-2249 ◽  
Author(s):  
Armin T. Tilke ◽  
Steffen Rothenhäußer ◽  
Markus Rochel ◽  
Knut Stahrenberg ◽  
Klaus Goller ◽  
...  
Keyword(s):  
Wireless Communication ◽  
Bipolar Transistor ◽  
Technology Platform ◽  
Bicmos Technology

Poly emitter bipolar transistor optimization for an advanced BiCMOS technology

2003 ◽  
Author(s):  
B. Landau ◽  
B. Bastani ◽  
D. Haueisen ◽  
R. Lahri ◽  
S. Joshi ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology

CMOS compatible temperature sensor based on the lateral bipolar transistor for very wide temperature range applications

1998 ◽  
Vol 71 (1-2) ◽  
pp. 3-9 ◽  
Author(s):  
R.A. Bianchi ◽  
F. Vinci Dos Santos ◽  
J.M. Karam ◽  
B. Courtois ◽  
F. Pressecq ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
Temperature Sensor ◽  
Bipolar Transistor ◽  
Temperature Range ◽  
Cmos Compatible
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