Increased current gain and suppression of peripheral base currents in silicide self-aligned narrow-width polysilicon-emitter transistors of an advanced BiCMOS technology

1988 ◽  
Vol 9 (5) ◽  
pp. 247-249 ◽  
Author(s):  
M.H. El-Diwany ◽  
M.P. Brassington ◽  
P. Tuntasood
Keyword(s):  
Current Gain ◽  
Bicmos Technology ◽  
Narrow Width ◽  
Polysilicon Emitter

scholarly journals New Double Current Controlled CFA (DCC–CFA) Based Voltage–Mode Oscillator with Independent Electronic Control of Oscillation Condition and Frequency

2013 ◽  
Vol 64 (2) ◽  
pp. 65-75 ◽  
Author(s):  
Roman Šotner ◽  
Norbert Herencsár ◽  
Jan Jeřábek ◽  
Radek Dvořák ◽  
Aslihan Kartci ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Active Element ◽  
Frequency Tuning ◽  
Current Gain ◽  
Intrinsic Resistance ◽  
Current Feedback ◽  
Voltage Mode ◽  
Simultaneous Control ◽  
Bicmos Technology ◽  
Electronically Tunable

In this paper, a new electronically tunable quadrature oscillator (ETQO) based on two modified versions of current feedback amplifiers (CFAs), the so called double current controlled CFA (DCC-CFAs) is presented. The frequency of oscillation (FO) of the proposed voltage-mode (VM) ETQO is electronically adjustable by current gain or by varying the intrinsic resistance of the X terminal of the active element used. The condition of oscillation (CO) is adjustable by current gain independently with respect to frequency of oscillation. Simultaneous control of current gain and intrinsic resistance allows linear control of FO and provides extension of frequency tuning range. In the proposed circuit all the capacitors are grounded. The use of only grounded capacitors makes the proposed circuit ideal for integrated circuit implementation. The presented active element realized by using BiCMOS technology and the behavior of proposed circuit are discussed in details. The theoretical results are verified by SPICE simulations based on CMOS ON-Semi C5 0.5 μm and bipolar ultra high frequency transistor arrays Intersil HFA 3096 process parameters.

scholarly journals Design of a 2 GHz Linear-in-dB Variable-Gain Amplifier with 80-dB Gain Range

2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Zhengyu Sun ◽  
Yuepeng Yan
Keyword(s):  
Current Gain ◽  
Variable Gain Amplifier ◽  
Current Steering ◽  
Gain Bandwidth ◽  
Broad Bandwidth ◽  
Variable Gain ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
Steering Current

A broadband linear-in-dB variable-gain amplifier (VGA) circuit is implemented in 0.18 μm SiGe BiCMOS process. The VGA comprises two cascaded variable-gain core, in which a hybrid current-steering current gain cell is inserted in the Cherry-Hooper amplifier to maintain a broad bandwidth while covering a wide gain range. Postlayout simulation results confirm that the proposed circuit achieves a 2 GHz 3-dB bandwidth with wide linear-in-dB gain tuning range from −19 dB up to 61 dB. The amplifier offers a competitive gain bandwidth product of 2805 GHz at the maximum gain for a 110-GHz ftBiCMOS technology. The amplifier core consumes 31 mW from a 3.3 V supply and occupies active area of 280 μm by 140 μm.

Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5- mu m BiCMOS technology for fast 4-Mb SRAM's

1993 ◽  
Vol 40 (6) ◽  
pp. 1121-1128 ◽  
Author(s):  
J.D. Hayden ◽  
J.D. Burnett ◽  
A.K. Perera ◽  
T.C. Mele ◽  
F.W. Walczyk ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology ◽  
Polysilicon Emitter

Hot Carrier Degradation of Gain in Bipolar Transistors

1995 ◽  
Vol 391 ◽  
Author(s):  
Isik C. Kizilyalli ◽  
Jeff D. Bude
Keyword(s):  
Impact Ionization ◽  
High Energy ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Exponential Dependence ◽  
Hot Electron ◽  
Hot Carrier ◽  
Bicmos Technology ◽  
Doping Profiles

AbstractIn this paper hot carrier related aging of n-p-n bipolar transistors is investigated experimentally and theoretically to bring physical insight into the bipolar transistor hFE (common emitter current gain) degradation. Electrical stress experiments are performed on transistors with different base doping profiles at varying temperatures. Detailed process simulations are performed to determine the doping profiles of the base-emitter junction. Monte Carlo transport simulations are then performed at different temperatures and bias conditions to determine the electron and hole distribution functions in the baseemitter junction. AT&T's 0.8 μ.m BICMOS technology is used to fabricate the experimental bipolar transistor structures. For this non-self aligned technology we attribute hFE degradation to the presence of hot holes and secondary electrons which are generated by hot hole impact ionization. This feed-back due to impact ionization has a dominant effect on the high energy tails of the distribution of both holes and electrons even when the overall current multiplication is low. Simple hot electron energy transport models do not contain the complexity to properly describe ionization feedback and carrier heating, and are therefore inadequate. An exponential dependence of the transistor lifetime on BVEBO is deduced for constant voltage stress (Vstress < BVEBO) conditions, confirming the importance of secondaries in the process of degradation.

Model and modeling of low temperature current gain of polysilicon emitter bipolar transistors

1994 ◽  
Vol 11 (3) ◽  
pp. 277-283
Author(s):  
Huang Liuxing ◽  
Wei Tongli ◽  
Zheng Jiang ◽  
Cao Juncheng
Keyword(s):  
Low Temperature ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Polysilicon Emitter
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