Development of advanced CMOS-compatible bipolar transistor for BiCMOS technology

1988 ◽  
Vol 24 (25) ◽  
pp. 1581 ◽  
Author(s):  
A. Nouailhat ◽  
G. Giroult ◽  
P. Delpech ◽  
A. Gérodolle
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology ◽  
Cmos Compatible

CMOS-compatible lateral bipolar transistor for BiCMOS technology. II. Experimental results

1992 ◽  
Vol 39 (8) ◽  
pp. 1865-1869 ◽  
Author(s):  
A. Tamba ◽  
T. Someya ◽  
T. Sakagami ◽  
N. Akiyama ◽  
Y. Kobayashi
Keyword(s):  
Bipolar Transistor ◽  
Experimental Results ◽  
Bicmos Technology ◽  
Cmos Compatible

CMOS-compatible lateral bipolar transistor for BiCMOS technology. I. Modeling

1992 ◽  
Vol 39 (4) ◽  
pp. 948-951 ◽  
Author(s):  
N. Akiyama ◽  
A. Tamba ◽  
Y. Wakui ◽  
Y. Kobayashi
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology ◽  
Cmos Compatible

CMOS Compatible Lateral Bipolar Transistor for BiCMOS Technology

1989 ◽  
Author(s):  
N. Akiyama ◽  
A. Tamba ◽  
Y. Wakui ◽  
Y. Kobayashi
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology ◽  
Cmos Compatible

Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5- mu m BiCMOS technology for fast 4-Mb SRAM's

1993 ◽  
Vol 40 (6) ◽  
pp. 1121-1128 ◽  
Author(s):  
J.D. Hayden ◽  
J.D. Burnett ◽  
A.K. Perera ◽  
T.C. Mele ◽  
F.W. Walczyk ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology ◽  
Polysilicon Emitter

Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs

2004 ◽  
Vol 48 (12) ◽  
pp. 2243-2249 ◽  
Author(s):  
Armin T. Tilke ◽  
Steffen Rothenhäußer ◽  
Markus Rochel ◽  
Knut Stahrenberg ◽  
Klaus Goller ◽  
...  
Keyword(s):  
Wireless Communication ◽  
Bipolar Transistor ◽  
Technology Platform ◽  
Bicmos Technology

Poly emitter bipolar transistor optimization for an advanced BiCMOS technology

2003 ◽  
Author(s):  
B. Landau ◽  
B. Bastani ◽  
D. Haueisen ◽  
R. Lahri ◽  
S. Joshi ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology

CMOS compatible temperature sensor based on the lateral bipolar transistor for very wide temperature range applications

1998 ◽  
Vol 71 (1-2) ◽  
pp. 3-9 ◽  
Author(s):  
R.A. Bianchi ◽  
F. Vinci Dos Santos ◽  
J.M. Karam ◽  
B. Courtois ◽  
F. Pressecq ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
Temperature Sensor ◽  
Bipolar Transistor ◽  
Temperature Range ◽  
Cmos Compatible

Hot Carrier Degradation of Gain in Bipolar Transistors

1995 ◽  
Vol 391 ◽  
Author(s):  
Isik C. Kizilyalli ◽  
Jeff D. Bude
Keyword(s):  
Impact Ionization ◽  
High Energy ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Exponential Dependence ◽  
Hot Electron ◽  
Hot Carrier ◽  
Bicmos Technology ◽  
Doping Profiles

AbstractIn this paper hot carrier related aging of n-p-n bipolar transistors is investigated experimentally and theoretically to bring physical insight into the bipolar transistor hFE (common emitter current gain) degradation. Electrical stress experiments are performed on transistors with different base doping profiles at varying temperatures. Detailed process simulations are performed to determine the doping profiles of the base-emitter junction. Monte Carlo transport simulations are then performed at different temperatures and bias conditions to determine the electron and hole distribution functions in the baseemitter junction. AT&T's 0.8 μ.m BICMOS technology is used to fabricate the experimental bipolar transistor structures. For this non-self aligned technology we attribute hFE degradation to the presence of hot holes and secondary electrons which are generated by hot hole impact ionization. This feed-back due to impact ionization has a dominant effect on the high energy tails of the distribution of both holes and electrons even when the overall current multiplication is low. Simple hot electron energy transport models do not contain the complexity to properly describe ionization feedback and carrier heating, and are therefore inadequate. An exponential dependence of the transistor lifetime on BVEBO is deduced for constant voltage stress (Vstress < BVEBO) conditions, confirming the importance of secondaries in the process of degradation.

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