Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology

1993 ◽  
Author(s):  
Ji Zhao ◽  
Guann-pyng Li ◽  
K. Y. Liao ◽  
Maw-Rong Chin ◽  
J. Y. Sun
Keyword(s):  
Current Gain ◽  
Current Stress ◽  
Boron Doped ◽  
Forward Current ◽  
Bicmos Technology ◽  
Polysilicon Emitter

On the effects of hydrogen in p-n-p transistors under forward current stress in a C-BiCMOS technology

1993 ◽  
Vol 14 (1) ◽  
pp. 4-6 ◽  
Author(s):  
J. Zhao ◽  
G.P. Li ◽  
K.Y. Liao ◽  
M.-R. Chin ◽  
J.Y.-C. Sun
Keyword(s):  
Current Stress ◽  
Forward Current ◽  
Bicmos Technology

Resolving the mechanisms of current gain increase under forward current stress in poly emitter n-p-n transistors

1993 ◽  
Vol 14 (5) ◽  
pp. 252-255 ◽  
Author(s):  
J. Zhao ◽  
G.P. Li ◽  
K.Y. Liao ◽  
M.-R. Chin ◽  
J.Y.-C. Sun ◽  
...  
Keyword(s):  
Current Gain ◽  
Current Stress ◽  
Forward Current

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

scholarly journals New Double Current Controlled CFA (DCC–CFA) Based Voltage–Mode Oscillator with Independent Electronic Control of Oscillation Condition and Frequency

2013 ◽  
Vol 64 (2) ◽  
pp. 65-75 ◽  
Author(s):  
Roman Šotner ◽  
Norbert Herencsár ◽  
Jan Jeřábek ◽  
Radek Dvořák ◽  
Aslihan Kartci ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Active Element ◽  
Frequency Tuning ◽  
Current Gain ◽  
Intrinsic Resistance ◽  
Current Feedback ◽  
Voltage Mode ◽  
Simultaneous Control ◽  
Bicmos Technology ◽  
Electronically Tunable

In this paper, a new electronically tunable quadrature oscillator (ETQO) based on two modified versions of current feedback amplifiers (CFAs), the so called double current controlled CFA (DCC-CFAs) is presented. The frequency of oscillation (FO) of the proposed voltage-mode (VM) ETQO is electronically adjustable by current gain or by varying the intrinsic resistance of the X terminal of the active element used. The condition of oscillation (CO) is adjustable by current gain independently with respect to frequency of oscillation. Simultaneous control of current gain and intrinsic resistance allows linear control of FO and provides extension of frequency tuning range. In the proposed circuit all the capacitors are grounded. The use of only grounded capacitors makes the proposed circuit ideal for integrated circuit implementation. The presented active element realized by using BiCMOS technology and the behavior of proposed circuit are discussed in details. The theoretical results are verified by SPICE simulations based on CMOS ON-Semi C5 0.5 μm and bipolar ultra high frequency transistor arrays Intersil HFA 3096 process parameters.

scholarly journals Design of a 2 GHz Linear-in-dB Variable-Gain Amplifier with 80-dB Gain Range

2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Zhengyu Sun ◽  
Yuepeng Yan
Keyword(s):  
Current Gain ◽  
Variable Gain Amplifier ◽  
Current Steering ◽  
Gain Bandwidth ◽  
Broad Bandwidth ◽  
Variable Gain ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
Steering Current

A broadband linear-in-dB variable-gain amplifier (VGA) circuit is implemented in 0.18 μm SiGe BiCMOS process. The VGA comprises two cascaded variable-gain core, in which a hybrid current-steering current gain cell is inserted in the Cherry-Hooper amplifier to maintain a broad bandwidth while covering a wide gain range. Postlayout simulation results confirm that the proposed circuit achieves a 2 GHz 3-dB bandwidth with wide linear-in-dB gain tuning range from −19 dB up to 61 dB. The amplifier offers a competitive gain bandwidth product of 2805 GHz at the maximum gain for a 110-GHz ftBiCMOS technology. The amplifier core consumes 31 mW from a 3.3 V supply and occupies active area of 280 μm by 140 μm.

Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5- mu m BiCMOS technology for fast 4-Mb SRAM's

1993 ◽  
Vol 40 (6) ◽  
pp. 1121-1128 ◽  
Author(s):  
J.D. Hayden ◽  
J.D. Burnett ◽  
A.K. Perera ◽  
T.C. Mele ◽  
F.W. Walczyk ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology ◽  
Polysilicon Emitter
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