scholarly journals Ultrafast shift and rectification photocurrents in GaAs quantum wells: Excitation intensity dependence and the importance of band mixing

2016 ◽  
Vol 94 (8) ◽  
Author(s):  
Huynh Thanh Duc ◽  
Reinold Podzimski ◽  
Shekhar Priyadarshi ◽  
Mark Bieler ◽  
Torsten Meier
Keyword(s):  
Quantum Wells ◽  
Excitation Intensity ◽  
Intensity Dependence ◽  
Band Mixing

Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells

2002 ◽  
Vol 41 (Part 1, No. 4A) ◽  
pp. 2082-2083 ◽  
Author(s):  
Sho Shirakata ◽  
Masahiko Kondow ◽  
Takeshi Kitatani
Keyword(s):  
Quantum Wells ◽  
Excitation Intensity ◽  
Photoluminescence Spectra ◽  
Single Quantum ◽  
Intensity Dependence

Excitation intensity dependence of photoluminescence from narrow 〈100〉- and 〈111〉A-grownInxGa1−xAs/GaAssingle quantum wells

1999 ◽  
Vol 59 (7) ◽  
pp. 5049-5055 ◽  
Author(s):  
T. Sauncy ◽  
M. Holtz ◽  
O. Brafman ◽  
D. Fekete ◽  
Y. Finkelstein
Keyword(s):  
Quantum Wells ◽  
Excitation Intensity ◽  
Intensity Dependence

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

scholarly journals Excitation Intensity Dependence of Photoluminescence Blinking in CsPbBr3 Perovskite Nanocrystals

2018 ◽  
Vol 122 (22) ◽  
pp. 12106-12113 ◽  
Author(s):  
Natalie A. Gibson ◽  
Brent A. Koscher ◽  
A. Paul Alivisatos ◽  
Stephen R. Leone
Keyword(s):  
Excitation Intensity ◽  
Intensity Dependence ◽  
Perovskite Nanocrystals

Band Mixing and Strain in Quantum Wells

1994 ◽  
pp. 178-231
Author(s):  
Weng W. Chow ◽  
Stephan W. Koch ◽  
Murray Sargent
Keyword(s):  
Quantum Wells ◽  
Band Mixing
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