Excitation intensity dependence of photoluminescence from narrow 〈100〉- and 〈111〉A-grownInxGa1−xAs/GaAssingle quantum wells

1999 ◽  
Vol 59 (7) ◽  
pp. 5049-5055 ◽  
Author(s):  
T. Sauncy ◽  
M. Holtz ◽  
O. Brafman ◽  
D. Fekete ◽  
Y. Finkelstein
Keyword(s):  
Quantum Wells ◽  
Excitation Intensity ◽  
Intensity Dependence

scholarly journals Ultrafast shift and rectification photocurrents in GaAs quantum wells: Excitation intensity dependence and the importance of band mixing

2016 ◽  
Vol 94 (8) ◽  
Author(s):  
Huynh Thanh Duc ◽  
Reinold Podzimski ◽  
Shekhar Priyadarshi ◽  
Mark Bieler ◽  
Torsten Meier
Keyword(s):  
Quantum Wells ◽  
Excitation Intensity ◽  
Intensity Dependence ◽  
Band Mixing

Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells

2002 ◽  
Vol 41 (Part 1, No. 4A) ◽  
pp. 2082-2083 ◽  
Author(s):  
Sho Shirakata ◽  
Masahiko Kondow ◽  
Takeshi Kitatani
Keyword(s):  
Quantum Wells ◽  
Excitation Intensity ◽  
Photoluminescence Spectra ◽  
Single Quantum ◽  
Intensity Dependence

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Excitation Intensity Dependence of Photoluminescence Blinking in CsPbBr3 Perovskite Nanocrystals

2018 ◽  
Vol 122 (22) ◽  
pp. 12106-12113 ◽  
Author(s):  
Natalie A. Gibson ◽  
Brent A. Koscher ◽  
A. Paul Alivisatos ◽  
Stephen R. Leone
Keyword(s):  
Excitation Intensity ◽  
Intensity Dependence ◽  
Perovskite Nanocrystals

Excitation Intensity Dependence of Ga1-xAlxAs-GaAs-Superlattice Photoluminescence

1987 ◽  
Vol 35 (1) ◽  
pp. 76-78 ◽  
Author(s):  
H Weinert ◽  
F Henneberger ◽  
U Woggon ◽  
I N Uraltsev ◽  
H-G Brühl
Keyword(s):  
Excitation Intensity ◽  
Intensity Dependence

Temperature Dependence of Cathodoluminescence From InxGa1-xAs/GaAs Multiple Quantum Wells

1995 ◽  
Vol 379 ◽  
Author(s):  
K. Rammohan ◽  
D.H. Rich ◽  
A. Larsson
Keyword(s):  
Activation Energy ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Spatial Variations ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Nonradiative Recombination ◽  
Intensity Dependence ◽  
Thermally Activated

ABSTRACTThe temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The spatial variations in activation energy caused by the presence of interfacial misfit dislocations is examined. The CL intensity dependence on temperature for T ≲ 150 K is controlled by thermally activated nonradiative recombination. For T ≳ 150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.

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