Temperature and excitation intensity dependence of photoluminescence in AlGaN quantum wells with mixed two-dimensional and three-dimensional morphology

2011 ◽  
Vol 110 (7) ◽  
pp. 073512 ◽  
Author(s):  
G. Rajanna ◽  
W. Feng ◽  
S. Sohal ◽  
V. V. Kuryatkov ◽  
S. A. Nikishin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Three Dimensional ◽  
Excitation Intensity ◽  
Two Dimensional ◽  
Intensity Dependence

Electric-field-dependent absorption of ZnSe-based quantum wells: The transition from two-dimensional to three-dimensional behavior

1998 ◽  
Vol 58 (16) ◽  
pp. 10709-10720 ◽  
Author(s):  
D. Merbach ◽  
E. Schöll ◽  
W. Ebeling ◽  
P. Michler ◽  
J. Gutowski
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Field Dependent ◽  
Dependent Absorption

scholarly journals Ultrafast shift and rectification photocurrents in GaAs quantum wells: Excitation intensity dependence and the importance of band mixing

2016 ◽  
Vol 94 (8) ◽  
Author(s):  
Huynh Thanh Duc ◽  
Reinold Podzimski ◽  
Shekhar Priyadarshi ◽  
Mark Bieler ◽  
Torsten Meier
Keyword(s):  
Quantum Wells ◽  
Excitation Intensity ◽  
Intensity Dependence ◽  
Band Mixing

EXCITON CONFINEMENT IN SEMICONDUCTOR MULTIPLE QUANTUM WELLS

1990 ◽  
Vol 04 (15n16) ◽  
pp. 2345-2356
Author(s):  
Y. FU ◽  
K. A. CHAO
Keyword(s):  
Wave Function ◽  
Perturbation Theory ◽  
Binding Energy ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Three Dimensional ◽  
Exciton Binding Energy ◽  
Multiple Quantum ◽  
Two Dimensional ◽  
Barrier Width

Exciton binding energy in semiconductor multiple quantum well (MQW) systems is analyzed with both the variational method and the perturbation theory. The intrinsic deficiency of the use of the two-dimensional exciton envelop wave function is clearly demonstrated. Using a GaAs/Al x Ga 1−xAs MQW as an example to calculate the exciton binding energy with a variational three-dimensional trial envelop function, we found that in many realistic samples the spatial extension of an exciton covers a region of several lattice constant dA + dB, where dA is the barrier width and dB is the well width.

Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells

2002 ◽  
Vol 41 (Part 1, No. 4A) ◽  
pp. 2082-2083 ◽  
Author(s):  
Sho Shirakata ◽  
Masahiko Kondow ◽  
Takeshi Kitatani
Keyword(s):  
Quantum Wells ◽  
Excitation Intensity ◽  
Photoluminescence Spectra ◽  
Single Quantum ◽  
Intensity Dependence

Two‐dimensional versus three‐dimensional excitons in wide GaAs quantum wells

1994 ◽  
Vol 75 (1) ◽  
pp. 289-296 ◽  
Author(s):  
Jun‐ichi Kusano ◽  
Gerrit E. W. Bauer ◽  
Yoshinobu Aoyagi
Keyword(s):  
Quantum Wells ◽  
Three Dimensional ◽  
Two Dimensional

Excitation intensity dependence of photoluminescence from narrow 〈100〉- and 〈111〉A-grownInxGa1−xAs/GaAssingle quantum wells

1999 ◽  
Vol 59 (7) ◽  
pp. 5049-5055 ◽  
Author(s):  
T. Sauncy ◽  
M. Holtz ◽  
O. Brafman ◽  
D. Fekete ◽  
Y. Finkelstein
Keyword(s):  
Quantum Wells ◽  
Excitation Intensity ◽  
Intensity Dependence
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