valence band mixing
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2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.


2016 ◽  
Vol 108 (19) ◽  
pp. 191113
Author(s):  
A. V. Koudinov ◽  
C. Kehl ◽  
G. Astakhov ◽  
J. Geurts ◽  
T. Wojtowicz ◽  
...  

2016 ◽  
Vol 108 (10) ◽  
pp. 101905 ◽  
Author(s):  
M. Motyka ◽  
M. Dyksik ◽  
K. Ryczko ◽  
R. Weih ◽  
M. Dallner ◽  
...  

ACS Nano ◽  
2014 ◽  
Vol 8 (12) ◽  
pp. 12669-12675 ◽  
Author(s):  
Rachel Fainblat ◽  
Franziska Muckel ◽  
Charles J. Barrows ◽  
Vladimir A. Vlaskin ◽  
Daniel R. Gamelin ◽  
...  

2013 ◽  
Vol 52 (12R) ◽  
pp. 125001 ◽  
Author(s):  
Edmund Harbord ◽  
Yasutomo Ota ◽  
Yuichi Igarashi ◽  
Masayuki Shirane ◽  
Naoto Kumagai ◽  
...  

2013 ◽  
Vol 113 (11) ◽  
pp. 113706 ◽  
Author(s):  
Yen-Chun Tseng ◽  
David M.-T. Kuo ◽  
Yia-Chung Chang

2013 ◽  
Vol 87 (8) ◽  
Author(s):  
M. V. Durnev ◽  
M. M. Glazov ◽  
E. L. Ivchenko ◽  
M. Jo ◽  
T. Mano ◽  
...  

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