scholarly journals Excitation Intensity Dependence of Photoluminescence Blinking in CsPbBr3 Perovskite Nanocrystals

2018 ◽  
Vol 122 (22) ◽  
pp. 12106-12113 ◽  
Author(s):  
Natalie A. Gibson ◽  
Brent A. Koscher ◽  
A. Paul Alivisatos ◽  
Stephen R. Leone
1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.


2016 ◽  
Vol 94 (8) ◽  
Author(s):  
Huynh Thanh Duc ◽  
Reinold Podzimski ◽  
Shekhar Priyadarshi ◽  
Mark Bieler ◽  
Torsten Meier

1987 ◽  
Vol 35 (1) ◽  
pp. 76-78 ◽  
Author(s):  
H Weinert ◽  
F Henneberger ◽  
U Woggon ◽  
I N Uraltsev ◽  
H-G Brühl

1984 ◽  
Vol 53 (11) ◽  
pp. 4064-4069 ◽  
Author(s):  
Tomoko Ohtsuki ◽  
Takashi Kushida ◽  
Shozo Hongo ◽  
Hiroshi Bō

1998 ◽  
Vol 42 (7-8) ◽  
pp. 1335-1339 ◽  
Author(s):  
J Motohisa ◽  
J.J Baumberg ◽  
A.P Heberle ◽  
J Allam

2016 ◽  
Vol 15 (10) ◽  
pp. 1304-1309 ◽  
Author(s):  
Y. Ishibashi ◽  
Y. Inoue ◽  
T. Asahi

When a rubrene crystal was excited with an intense fs pulse (397 nm), transient local heating (∼ps) of the crystal through nonradiative relaxation from SN to S1 accelerates singlet fission of the S1.


2005 ◽  
Vol 278 (1-4) ◽  
pp. 320-324 ◽  
Author(s):  
M. Ohashi ◽  
Y. Ichinohe ◽  
G. Shigaura ◽  
Y. Sasaki ◽  
Y. Chikarayumi ◽  
...  

1991 ◽  
Vol 8 (1) ◽  
pp. 48-51
Author(s):  
Li Qingshan ◽  
Guo Hua ◽  
Ma Yurong ◽  
Fang Rongchuan ◽  
Xu Cunyi

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