Band-mixing effects and excitonic optical properties in GaAs quantum wire structures-comparison with the quantum wells

1988 ◽  
Vol 24 (8) ◽  
pp. 1778-1790 ◽  
Author(s):  
I. Suemune ◽  
L.A. Coldren
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Quantum Wire ◽  
Mixing Effects ◽  
Band Mixing

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

INTERBAND OPTICAL PROPERTIES OF QUANTUM WIRES: THEORY AND APPLICATION

1995 ◽  
Vol 04 (01) ◽  
pp. 83-98 ◽  
Author(s):  
D. S. CITRIN
Keyword(s):  
Optical Properties ◽  
Quantum Wire ◽  
Radiative Decay ◽  
Heavy Hole ◽  
Quantum Wires ◽  
Wire Array ◽  
Light Hole ◽  
Polarization Modulator ◽  
Hole Band ◽  
Band Mixing

The electronic states near the fundamental gap largely determine the most commonly investigated linear and nonlinear optical properties of quantum wires. We first discuss heavy-hole-light-hole band-mixing effects and illustrate the consequences with an application in opto-electronics, namely a quantum-wire-array based polarization modulator. Next, an overview of polariton effects which determine the time scale for excitonic radiative decay is given and comparison with recent experiments made.

Valence-band mixing effects on hole oscillations in coupled quantum wells

1993 ◽  
Vol 47 (8) ◽  
pp. 4563-4568 ◽  
Author(s):  
C. Juang ◽  
P. A. Chen ◽  
C. Y. Chang
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Coupled Quantum Wells ◽  
Mixing Effects ◽  
Band Mixing ◽  
Valence Band Mixing

Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence‐band mixing effects

1990 ◽  
Vol 57 (26) ◽  
pp. 2835-2837 ◽  
Author(s):  
S. W. Corzine ◽  
R. H. Yan ◽  
L. A. Coldren
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Mixing Effects ◽  
Band Mixing ◽  
Valence Band Mixing

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

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