Schottky-barrier and interface formation of Cs/GaSb(110) and Rb/GaSb(110) at room temperature

1994 ◽  
Vol 49 (8) ◽  
pp. 5490-5497 ◽  
Author(s):  
K. M. Schirm ◽  
P. Soukiassian ◽  
P. S. Mangat ◽  
L. Soonckindt
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Interface Formation

Schottky barrier and interface formation of metal–GaTe(001) interfaces

1998 ◽  
Vol 84 (4) ◽  
pp. 1990-1993 ◽  
Author(s):  
J. Almeida ◽  
H. Berger ◽  
G. Margaritondo
Keyword(s):  
Schottky Barrier ◽  
Interface Formation ◽  
Metal Gate

Room temperature spin injection into SiC via Schottky barrier

2018 ◽  
Vol 113 (22) ◽  
pp. 222402 ◽  
Author(s):  
L. Huang ◽  
H. Wu ◽  
P. Liu ◽  
X. M. Zhang ◽  
B. S. Tao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Spin Injection

SCHOTTKY BARRIER AMORPHOUS–CRYSTALLINE INTERFACE FORMATION

1983 ◽  
pp. 250-263
Author(s):  
Malcolm J. THOMPSON ◽  
Robert J. NEMANICH ◽  
Chuang Chuang TSAI
Keyword(s):  
Schottky Barrier ◽  
Interface Formation

Dislocation Trapping Potential Measured by SEM-CCM

1985 ◽  
Vol 46 ◽  
Author(s):  
Sam Mil'Shtein
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Electrical Potential ◽  
Image Formation ◽  
Trapping Potential ◽  
Variable Parameters ◽  
Single Dislocation ◽  
Versus Bias ◽  
The Right ◽  
First Time

AbstractThe intensity of contrast and width of the image of a single dislocation in silicon were measured versus bias of Schottky barrier at room temperature. A regime of measurements was established, which reduced dramatically the number of variable parameters involved in contrast formation. In addition, using the right regime of SEM-CCM one can determine the position of a defect relative to the surface of the specimen without doing TEM measurements. It was shown for the first time that from contrast readout one can determine the dislocation electrical potential. A model of image formation is discussed.

Co/Si(111) interface formation at room temperature

1987 ◽  
Vol 36 (12) ◽  
pp. 6681-6684 ◽  
Author(s):  
J. Derrien ◽  
M. De Crescenzi ◽  
E. Chainet ◽  
C. d’Anterroches ◽  
C. Pirri ◽  
...  
Keyword(s):  
Room Temperature ◽  
Interface Formation

Ohmic Contact Formation Mechanism of Pd-based Contact to p-GaN

2000 ◽  
Vol 622 ◽  
Author(s):  
Dae-Woo Kim ◽  
Joon Cheol Bae ◽  
Woo Jin Kim ◽  
Hong Koo Baik ◽  
Chong Cook Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Formation Mechanism ◽  
Ohmic Contact ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Contact Formation ◽  
Ohmic Behavior ◽  
Plane Direction ◽  
Ohmic Contact Formation

ABSTRACTWe have investigated surface treatment effect on the interfacial reaction of Pd/p-GaN interface and also room temperature ohmic contact formation mechanism of Pd-based ohmic contact. In order to examine room temperature ohmic behavior, various metal contact systems were deposited and current-voltage measurements were carried out. In spite of large theoretical Schottky barrier height between Pd and p-GaN, Pd-based contact showed perfect ohmic characteristic even before annealing. According to the results of synchrotron X-ray radiation, the closed-packed atomic planes (111) of the Pd film were quite well ordered in surface normal direction as well as in the in-plane direction. The effective Schottky barrier height of Au/Pd/Mg/Pd/p-GaN was 0.47eV, which was estimated by Norde method. This discrepancy between theoretical barrier height and the measured one might be due to the epitaxial growth of Pd contact metal and so the room-temperature ohmic characteristic of Pd-based ohmic contact was related strongly to the in-plane epitaxial quality of metal on p-GaN.

Initial Stages of Interface Formation in the Si/Sn System

1986 ◽  
Vol 77 ◽  
Author(s):  
M. Zinke-Allmang ◽  
H.-J. Gossmann ◽  
L. C. Feldman ◽  
G. J. Fisanick
Keyword(s):  
Room Temperature ◽  
Group Iv ◽  
Necessary Condition ◽  
Interface Formation ◽  
Island Formation ◽  
Simple Growth ◽  
Critical Coverage

ABSTRACTGroup IV-IV heterostructures with Sn as one constituent have potentially important applications. We report on an investigation of the initial stages of interface formation for deposition of Sn on Si(100)2×1 and Si(111)7×7. We find that simple growth occurs up to a critical coverage θc. (α1.25×1015 cm-2), independent of temperature. Beyond θc. growth continues to be laminar for deposition at 150 K only, while island formation is observed at temperatures at and above room temperature. The Si(111)7×7 reconstruction seems unperturbed by Sn deposition at room temperature while the Si(100)2×1 begins to order. However, the reordering, a necessary condition for perfect growth, is incomplete.

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