Initial Stages of Interface Formation in the Si/Sn System

1986 ◽  
Vol 77 ◽  
Author(s):  
M. Zinke-Allmang ◽  
H.-J. Gossmann ◽  
L. C. Feldman ◽  
G. J. Fisanick
Keyword(s):  
Room Temperature ◽  
Group Iv ◽  
Necessary Condition ◽  
Interface Formation ◽  
Island Formation ◽  
Simple Growth ◽  
Critical Coverage

ABSTRACTGroup IV-IV heterostructures with Sn as one constituent have potentially important applications. We report on an investigation of the initial stages of interface formation for deposition of Sn on Si(100)2×1 and Si(111)7×7. We find that simple growth occurs up to a critical coverage θc. (α1.25×1015 cm-2), independent of temperature. Beyond θc. growth continues to be laminar for deposition at 150 K only, while island formation is observed at temperatures at and above room temperature. The Si(111)7×7 reconstruction seems unperturbed by Sn deposition at room temperature while the Si(100)2×1 begins to order. However, the reordering, a necessary condition for perfect growth, is incomplete.

Growth of Group IV-IV Heterostructures: Initial Stages of Interface Formation

1986 ◽  
Vol 67 ◽  
Author(s):  
H.-J. Gossmann ◽  
L. C. Feldman
Keyword(s):  
Surface Segregation ◽  
Substrate Surface ◽  
Group Iv ◽  
Necessary Condition ◽  
Ion Scattering ◽  
Interface Formation ◽  
General Role ◽  
Low Energy Electron ◽  
Critical Coverage

ABSTRACTThe two major issues in the growth of a heterostructure are (1) the degree of perfection of the overlayer and (2) the sharpness of the interface. The initial stages of interface formation play a crucial role in this respect. Relevant questions are addressed under atomically clean conditions in the Si/Ge Si/Si and Ge/Sn systems, using ion scattering surface analysis, low energy electron diffraction and Auger electron spectroscopy. Of particular interest with respect to (1) is the general role of reconstruction in epitaxial growth: A necessary condition for perfect growth is the reordering of the substrate surface reconstruction. We show that the deposition temperature necessary to achieve this reordering depends strongly on the topography of the substrate reconstruction. For example, Ge deposition at room-temperature reorders the Si(100)2×1 reconstruction but not the Si(111)7×7, implying different epitaxial temperatures for these two substrates. To illustrate (2) we discuss the complex growth and anomalous diffusion found in the Ge/Sn system. Below a certain critical coverage Θc (1.15·1015 cm−2) no indiffusion of the Sn overlayer takes place, even at 700 K, although above Θc severe indiffusion does occur at this temperature. This result is discussed in terms of theories of surface segregation.

scholarly journals Creation of pure non-crystalline diamond nanostructures via room temperature ion irradiation and subsequent thermal annealing

2021 ◽  
Author(s):  
Federico Picollo ◽  
Alfio Battiato ◽  
Federico Bosia ◽  
Fabio Scaffidi Muta ◽  
Paolo Olivero ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Group Iv ◽  
Chemical Bonds ◽  
Group Iv Elements ◽  
Silicon And Germanium ◽  
Subsequent Thermal Annealing

Carbon exhibits a remarkable range of structural forms, due to the availability of sp3, sp2 and sp1 chemical bonds. Contrarily to other group IV elements such as silicon and germanium,...

Room temperature p-orbital magnetism in carbon chains and the role of group IV, V, VI, and VII dopants

Nanoscale ◽  
2018 ◽  
Vol 10 (23) ◽  
pp. 11186-11195 ◽  
Author(s):  
C. H. Wong ◽  
E. A. Buntov ◽  
A. F. Zatsepin ◽  
J. Lyu ◽  
R. Lortz ◽  
...  
Keyword(s):  
Rare Earth ◽  
Transition Metals ◽  
Room Temperature ◽  
Group Iv ◽  
Rare Earth Ions ◽  
Next Generation ◽  
Spintronic Devices ◽  
Carbon Chains ◽  
Orbital Magnetism

The study of magnetism without the involvement of transition metals or rare earth ions is considered the key to the fabrication of next-generation spintronic devices.

Co/Si(111) interface formation at room temperature

1987 ◽  
Vol 36 (12) ◽  
pp. 6681-6684 ◽  
Author(s):  
J. Derrien ◽  
M. De Crescenzi ◽  
E. Chainet ◽  
C. d’Anterroches ◽  
C. Pirri ◽  
...  
Keyword(s):  
Room Temperature ◽  
Interface Formation

scholarly journals The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 1006
Author(s):  
Hongqiang Li ◽  
Jianing Wang ◽  
Jinjun Bai ◽  
Shanshan Zhang ◽  
Sai Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Single Mode ◽  
Group Iv ◽  
Light Power ◽  
Fully Integrated ◽  
Electronic And Optical Properties ◽  
Novel Approach

The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the structural, electronic, and optical properties are excited for lasing at 1550 nm. The preliminary results show that the device can produce a good light spot shape convenient for direct coupling with the waveguide and single-mode light emission. The laser luminous power can reach up to 2.32 mW at a wavelength of 1550 nm with a 300-mA current. Moreover, at room temperature (300 K), the laser can maintain maximum light power and an ideal wavelength (1550 nm). Thus, this study provides a novel approach to reliable, efficient electrically pumped silicon-based lasers.

Supersilylverbindungen Der Borgruppenelemente, IV [1]. Supersilylelementhalogenide tBu3SIEX2 Und (tBu3Si)2Ex Mit E = Al, Ga, In: Synthesen, Eigenschaften, Strukturen [2] / Supersilylated Compounds of the Thirteenth Group, IV [I]. Supersilylelement Halides tBu3SIEX2 And (tBu3Si)2Ex with E = Al, Ga, In: Syntheses, Properties, Structures [2]

1998 ◽  
Vol 53 (3) ◽  
pp. 333-348 ◽  
Author(s):  
Nils Wiberg ◽  
Kerstin Amelunxen ◽  
Hans-Wolfram Lemer ◽  
Heinrich Nöth ◽  
Jörg Knizek ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Gas Phase ◽  
Structure Analysis ◽  
Room Temperature ◽  
Group Iv ◽  
Lewis Acidity ◽  
X Ray ◽  
Oxygen Sensitive

Abstract Water and oxygen sensitive compounds (tBu3SiEX2)2, tBu3SiEX2 Do and (tBu3Si)2EX (E = AI, Ga, In; X = (F), Cl, Br; Do = OR2, NR3) have been synthezised by reaction of EX3 with tBu3SiNa in the absence or presence of donors. In addition, (tBu3Si)AlBr2, (tBu3Si)2InF and tBu3SiInBr2 were prepared by reaction of AlBr3 with (tBu3Sij2Zn or of (tBu3Si)2In- In(Si/Bu3)2 with AgF2 and HBr, respectively. The adduct [tBu3SiAlBr2 · AlBr3 ·1/2MgBr2]2 is formed from AlBr3 and (tBu3Si)2Mg(THF)2. Thermal decomposition of the compounds in solution or in the gas phase leads to the formation of tBu3SiEX2 (from the dimers or the donor adducts) and of tBu3SiX. The Lewis acidity of tBu3SiEX2 against donors increases in the direction Do = Et2O < THF < NEtMe2. Dehalogenation of (tBu3Si)2ECl with tBu3SiNa(THF)2 in pentane at room temperature leads to clusters (tBu3Si)4Al2, (tBu3Si)3Ga2•, (tBu3Si)4In2 and (tBu3Si)3Ga2Na(THF)3, reduction of tBu3SiGaCl2 with Na or K in heptane at 100°C to the tetrahedran (tBu3Si)4Ga4. The structures of (tBu3SiGaCl2)2, (tBu3Si)2GaCl, and [tBu3SiAlBr2 AlBr3 ·1/2MgBr2]2 have been determined by X-ray structure analysis.

Room-Temperature Ferroelectricity in Group-IV Metal Chalcogenide Nanowires

2019 ◽  
Vol 141 (38) ◽  
pp. 15040-15045 ◽  
Author(s):  
Jun-Jie Zhang ◽  
Jie Guan ◽  
Shuai Dong ◽  
Boris I. Yakobson
Keyword(s):  
Room Temperature ◽  
Group Iv ◽  
Metal Chalcogenide

PHOTOEMISSION STUDY OF THE GADOLINIUM/GaAs(100) INTERFACE WITH SYNCHROTRON RADIATION

1997 ◽  
Vol 04 (01) ◽  
pp. 25-31 ◽  
Author(s):  
SHIHONG XU ◽  
FAPEI ZHANG ◽  
ERDONG LU ◽  
XIAOJIANG YU ◽  
FAQIANG XU ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Interface Structure ◽  
Binding Energies ◽  
Photoemission Spectroscopy ◽  
Interface Formation ◽  
X Ray ◽  
Solution Density ◽  
Photoemission Study

Soft-X-ray photoemission spectroscopy was used to characterize the Gd/GaAs(100)-interface formation at room temperature. At low Gd coverage (<1 Å), the interface is near-abrupt, because no evidence of reaction is observed. With increasing Gd coverage, photoemission signals from chemically reacted product at the interface are observed, causing some intermixing between the overlayer and the substrate. For As atoms, they remain near the interface and have little diffusion. Ga atoms, however, are not kept near the interface, and they can diffuse into the Gd overlayer and segregate onto the surface instead. From the observed variations with metal coverage of binding energies and relative intensities of photoemission signals from the reacted layer, a profile of the interface structure is proposed, and some parameters (decaying length, segregation density and solution density, etc.) have been obtained. The results show that the deposition of Gd onto the GaAs (100) surface induces limited substrate disruption except for some diffusion and segregation of Ga atoms into the metal overlayer. This paper demonstrates that the disruption and epitaxial growth are not mutually exclusive in the Gd / GaAs (100) system.

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