Room temperature spin injection into SiC via Schottky barrier

2018 ◽  
Vol 113 (22) ◽  
pp. 222402 ◽  
Author(s):  
L. Huang ◽  
H. Wu ◽  
P. Liu ◽  
X. M. Zhang ◽  
B. S. Tao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Spin Injection

scholarly journals Dynamical Spin Injection into p-Type Germanium at Room Temperature

2013 ◽  
Vol 6 (2) ◽  
pp. 023001 ◽  
Author(s):  
Mariko Koike ◽  
Eiji Shikoh ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Shinya Yamada ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Injection ◽  
Dynamical Spin ◽  
P Type

scholarly journals Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

2011 ◽  
Vol 84 (16) ◽  
Author(s):  
Kun-Rok Jeon ◽  
Byoung-Chul Min ◽  
Young-Hun Jo ◽  
Hun-Sung Lee ◽  
Il-Jae Shin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Injection ◽  
Electrical Spin

Modulating room temperature spin injection into GaN towards the high-efficiency spin-light emitting diodes

2020 ◽  
Vol 13 (4) ◽  
pp. 043006 ◽  
Author(s):  
Anke Song ◽  
Jiajun Chen ◽  
Jinshen Lan ◽  
Deyi Fu ◽  
Jiangpeng Zhou ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Spin Injection ◽  
Light Emitting

scholarly journals Highly Efficient Room Temperature Spin Injection in a Metal-Insulator-Semiconductor Light-Emitting Diode

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L502-L504 ◽  
Author(s):  
Pol Van Dorpe ◽  
Vasyl F. Motsnyi ◽  
Mayke Nijboer ◽  
Etienne Goovaerts ◽  
Viacheslav I. Safarov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Highly Efficient

Dislocation Trapping Potential Measured by SEM-CCM

1985 ◽  
Vol 46 ◽  
Author(s):  
Sam Mil'Shtein
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Electrical Potential ◽  
Image Formation ◽  
Trapping Potential ◽  
Variable Parameters ◽  
Single Dislocation ◽  
Versus Bias ◽  
The Right ◽  
First Time

AbstractThe intensity of contrast and width of the image of a single dislocation in silicon were measured versus bias of Schottky barrier at room temperature. A regime of measurements was established, which reduced dramatically the number of variable parameters involved in contrast formation. In addition, using the right regime of SEM-CCM one can determine the position of a defect relative to the surface of the specimen without doing TEM measurements. It was shown for the first time that from contrast readout one can determine the dislocation electrical potential. A model of image formation is discussed.

Ohmic Contact Formation Mechanism of Pd-based Contact to p-GaN

2000 ◽  
Vol 622 ◽  
Author(s):  
Dae-Woo Kim ◽  
Joon Cheol Bae ◽  
Woo Jin Kim ◽  
Hong Koo Baik ◽  
Chong Cook Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Formation Mechanism ◽  
Ohmic Contact ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Contact Formation ◽  
Ohmic Behavior ◽  
Plane Direction ◽  
Ohmic Contact Formation

ABSTRACTWe have investigated surface treatment effect on the interfacial reaction of Pd/p-GaN interface and also room temperature ohmic contact formation mechanism of Pd-based ohmic contact. In order to examine room temperature ohmic behavior, various metal contact systems were deposited and current-voltage measurements were carried out. In spite of large theoretical Schottky barrier height between Pd and p-GaN, Pd-based contact showed perfect ohmic characteristic even before annealing. According to the results of synchrotron X-ray radiation, the closed-packed atomic planes (111) of the Pd film were quite well ordered in surface normal direction as well as in the in-plane direction. The effective Schottky barrier height of Au/Pd/Mg/Pd/p-GaN was 0.47eV, which was estimated by Norde method. This discrepancy between theoretical barrier height and the measured one might be due to the epitaxial growth of Pd contact metal and so the room-temperature ohmic characteristic of Pd-based ohmic contact was related strongly to the in-plane epitaxial quality of metal on p-GaN.

scholarly journals Spin-Injection Terahertz Radiation in Magnetic Junctions

2012 ◽  
Vol 190 ◽  
pp. 153-156
Author(s):  
S.G. Chigarev ◽  
E.M. Epshtein ◽  
Y.V. Gulyaev ◽  
I.V. Malikov ◽  
G.M. Mikhailov ◽  
...  
Keyword(s):  
Joule Heating ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Radiation Power ◽  
Spin Injection ◽  
Point Contact ◽  
Ferromagnetic Film ◽  
Stimulated Radiation ◽  
Radiation Processes ◽  
Thermal Background

Electromagnetic radiation of 1 - 10 THz range is observed at room temperature in a structure with a point contact between a ferromagnetic rod and a thin ferromagnetic film under electric current of high enough density. The radiation is due to nonequilibrium spin injection between the components of the structure. By estimates, the injection can lead to inverted population of the spin subbands. The radiation power exceeds by orders of magnitude the thermal background (with the Joule heating taking into account) and follows the current without inertia. Efficiency of the oscillator depends strongly on the material used and quantum efficiency may exceed the unity. It means the stimulated radiation processes play an important role.

Sign in / Sign up

Export Citation Format

Share Document