Co/Si(111) interface formation at room temperature

1987 ◽  
Vol 36 (12) ◽  
pp. 6681-6684 ◽  
Author(s):  
J. Derrien ◽  
M. De Crescenzi ◽  
E. Chainet ◽  
C. d’Anterroches ◽  
C. Pirri ◽  
...  
Keyword(s):  
Room Temperature ◽  
Interface Formation

Initial Stages of Interface Formation in the Si/Sn System

1986 ◽  
Vol 77 ◽  
Author(s):  
M. Zinke-Allmang ◽  
H.-J. Gossmann ◽  
L. C. Feldman ◽  
G. J. Fisanick
Keyword(s):  
Room Temperature ◽  
Group Iv ◽  
Necessary Condition ◽  
Interface Formation ◽  
Island Formation ◽  
Simple Growth ◽  
Critical Coverage

ABSTRACTGroup IV-IV heterostructures with Sn as one constituent have potentially important applications. We report on an investigation of the initial stages of interface formation for deposition of Sn on Si(100)2×1 and Si(111)7×7. We find that simple growth occurs up to a critical coverage θc. (α1.25×1015 cm-2), independent of temperature. Beyond θc. growth continues to be laminar for deposition at 150 K only, while island formation is observed at temperatures at and above room temperature. The Si(111)7×7 reconstruction seems unperturbed by Sn deposition at room temperature while the Si(100)2×1 begins to order. However, the reordering, a necessary condition for perfect growth, is incomplete.

PHOTOEMISSION STUDY OF THE GADOLINIUM/GaAs(100) INTERFACE WITH SYNCHROTRON RADIATION

1997 ◽  
Vol 04 (01) ◽  
pp. 25-31 ◽  
Author(s):  
SHIHONG XU ◽  
FAPEI ZHANG ◽  
ERDONG LU ◽  
XIAOJIANG YU ◽  
FAQIANG XU ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Interface Structure ◽  
Binding Energies ◽  
Photoemission Spectroscopy ◽  
Interface Formation ◽  
X Ray ◽  
Solution Density ◽  
Photoemission Study

Soft-X-ray photoemission spectroscopy was used to characterize the Gd/GaAs(100)-interface formation at room temperature. At low Gd coverage (<1 Å), the interface is near-abrupt, because no evidence of reaction is observed. With increasing Gd coverage, photoemission signals from chemically reacted product at the interface are observed, causing some intermixing between the overlayer and the substrate. For As atoms, they remain near the interface and have little diffusion. Ga atoms, however, are not kept near the interface, and they can diffuse into the Gd overlayer and segregate onto the surface instead. From the observed variations with metal coverage of binding energies and relative intensities of photoemission signals from the reacted layer, a profile of the interface structure is proposed, and some parameters (decaying length, segregation density and solution density, etc.) have been obtained. The results show that the deposition of Gd onto the GaAs (100) surface induces limited substrate disruption except for some diffusion and segregation of Ga atoms into the metal overlayer. This paper demonstrates that the disruption and epitaxial growth are not mutually exclusive in the Gd / GaAs (100) system.

Schottky-barrier and interface formation of Cs/GaSb(110) and Rb/GaSb(110) at room temperature

1994 ◽  
Vol 49 (8) ◽  
pp. 5490-5497 ◽  
Author(s):  
K. M. Schirm ◽  
P. Soukiassian ◽  
P. S. Mangat ◽  
L. Soonckindt
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Interface Formation

Co/Si(111) interface: Formation of an initial CoSi2phase at room temperature

1987 ◽  
Vol 51 (18) ◽  
pp. 1448-1450 ◽  
Author(s):  
J. Y. Veuillen ◽  
J. Derrien ◽  
P. A. Badoz ◽  
E. Rosencher ◽  
C. d’Anterroches
Keyword(s):  
Room Temperature ◽  
Interface Formation

Resonant-photoemission study of the mechanism for room-temperature-alloyed interface formation of Au and Ag on Si(111)-(2×1)

1988 ◽  
Vol 38 (2) ◽  
pp. 1047-1051 ◽  
Author(s):  
Motohiro Iwami ◽  
Masakazu Kubota ◽  
Tadashi Koyama ◽  
Hiroshi Tochihara ◽  
Yoshitada Murata
Keyword(s):  
Room Temperature ◽  
Interface Formation ◽  
Resonant Photoemission ◽  
Photoemission Study

Photoemission Studies Of The CU-GaAs(ll0) Interface Formation

1983 ◽  
Vol 25 ◽  
Author(s):  
S. H. Pan ◽  
T. Kendelewicz ◽  
W. G. Petru ◽  
M. D. Williams ◽  
I. Lindau ◽  
...  
Keyword(s):  
Fermi Level ◽  
Detailed Analysis ◽  
Conduction Band ◽  
Room Temperature ◽  
Metal Layer ◽  
Conduction Band Minimum ◽  
Strong Interactions ◽  
Interface Formation ◽  
X Ray

ABSTRACTThe cu-GaAS(ll0) interface formation nas been Studied with soft x-ray Photoemssion spectroscopy (SXPS) for Cu overlayers deposited at room temperature. Tne evolution of the tia 3a and As 3a spectra snow that strong interactions occur between Cu and the substrate during the formation of the Cu-GaAs interface. A cnemically smifted Ga 3d peak at 0.8 eV lower binging energy and strong moaification of the As 3d lineshape has been found. Detailed analysis nas shown that the dissociated As is preterentially segregated on the metal layer, but Ga remains mainly in the interfacial reion for trick Cu coverages (30 - 60 Å). Using a deconvolution tecnniqie we nave found that the final stabilized position of the interface Fermi level lies at about 0.9 eV below the conduction band minimum.

Formation and Electric Properties of Disordered Yb Layers on Si(111)7×7 Surface

2003 ◽  
Vol 770 ◽  
Author(s):  
Nickolay G. Galkin ◽  
Dmitrii L. Goroshko ◽  
Alexander S. Gouralnik ◽  
Sergei A. Dotsenko ◽  
Andrei N. Boulatov
Keyword(s):  
Room Temperature ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Growth Stages ◽  
Two Dimensional ◽  
Interface Formation ◽  
Dimensional Growth ◽  
2D And 3D ◽  
Semiconductor Type

AbstractInterface formation in Yb/Si(111) system has been investigated by AES and EELS spectroscopy and in situ Hall measurements at room temperature. It was found that interface formation process may be divided into five stages: 1) two-dimensional growth of Yb, 2) intermixing and formation of two-dimensional Yb silicide, 3) formation of 3D silicide islands, 4) growth of Yb on 3D silicide islands, 5) coalescence of 3D Yb – Yb silicide islands and formation of continuos Yb film. We attribute the observed character of conductivity in Yb/Si(111) system to the evolution of morphological and electrical properties of the growing Yb layer (2D Yb, silicide, metal) rather than to the changes within the space charge layer under the surface. Some amplitude oscillations have been observed in sheet conductivity, hole mobility and surface hole concentration within the coverage range below 6 ML where formation of a continuos Yb silicide film completes. Conductivity oscillations are explained by transition from semiconductor-type conductivity at the first growth stages (two-dimensional Yb growth) to metal-like conductivity of 2D and 3D Yb silicide films.

scholarly journals Giant band bending and interface formation of Cs/InAs(110) at room temperature

1994 ◽  
Vol 04 (C9) ◽  
pp. C9-217-C9-220 ◽  
Author(s):  
V. Yu. Aristov ◽  
P. S. Mangat ◽  
P. Soukiassian ◽  
G. Le Lay
Keyword(s):  
Room Temperature ◽  
Interface Formation ◽  
Band Bending
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