Schottky barrier and interface formation of metal–GaTe(001) interfaces

1998 ◽  
Vol 84 (4) ◽  
pp. 1990-1993 ◽  
Author(s):  
J. Almeida ◽  
H. Berger ◽  
G. Margaritondo
Keyword(s):  
Schottky Barrier ◽  
Interface Formation ◽  
Metal Gate

SCHOTTKY BARRIER AMORPHOUS–CRYSTALLINE INTERFACE FORMATION

1983 ◽  
pp. 250-263
Author(s):  
Malcolm J. THOMPSON ◽  
Robert J. NEMANICH ◽  
Chuang Chuang TSAI
Keyword(s):  
Schottky Barrier ◽  
Interface Formation

Short-channel metal-gate TFTs with modified Schottky-barrier source/drain

2006 ◽  
Vol 27 (1) ◽  
pp. 43-45 ◽  
Author(s):  
Chih-Feng Huang ◽  
Bing-Yue Tsui
Keyword(s):  
Schottky Barrier ◽  
Metal Gate ◽  
Short Channel

Ab initio studies on Schottky barrier heights at metal gate/LaAlO3 (001) interfaces

2006 ◽  
Vol 89 (12) ◽  
pp. 122115 ◽  
Author(s):  
Y. F. Dong ◽  
Y. Y. Mi ◽  
Y. P. Feng ◽  
A. C. H. Huan ◽  
S. J. Wang
Keyword(s):  
Ab Initio ◽  
Schottky Barrier ◽  
Metal Gate ◽  
Barrier Heights

Schottky barrier amorphous-crystalline interface formation

1983 ◽  
Vol 132 (1-3) ◽  
pp. A342
Author(s):  
MalcolmJ. Thompson ◽  
RobertJ. Nemanich ◽  
ChuangChuang Tsai
Keyword(s):  
Schottky Barrier ◽  
Interface Formation

Schottky-barrier and interface formation of Cs/GaSb(110) and Rb/GaSb(110) at room temperature

1994 ◽  
Vol 49 (8) ◽  
pp. 5490-5497 ◽  
Author(s):  
K. M. Schirm ◽  
P. Soukiassian ◽  
P. S. Mangat ◽  
L. Soonckindt
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Interface Formation

Sub-30 nm FinFETs with Schottky-Barrier Source/Drain Featuring Complementary Metal Silicides and Fully-Silicided Gate for P-FinFETs

2007 ◽  
Vol 995 ◽  
Author(s):  
Rinus Tek Po Lee ◽  
Kian-Ming Tan ◽  
Tsung-Yang Liow ◽  
Andy Eu-Jin Lim ◽  
Guo-Qiang Lo ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Metal Gate ◽  
Platinum Silicide ◽  
Gate Electrodes ◽  
Metal Silicides ◽  
Potential Applications ◽  
Electro Negativity

AbstractWe investigated the material and electrical characteristics of platinum and ytterbium silicides for potential applications as metallic Schottky-barrier source/drain (S/D) and fully-silicided (FUSI) gate electrodes in fin field-effect transistors (FinFETs). Due to the low electro-negativity parameter of ytterbium, a low temperature silicidation process was developed to avoid the reaction of ytterbium with the isolation regions (i.e. SiO2 and SiN) to integrate ytterbium silicide successfully in mesa-isolated n-FinFETs. The integration of FUSI metal gate into p-FinFETs was also explored in this work and a novel two-step silicidation process that integrates simultaneously two different phases of platinum silicide with the appropriate work function values for gate electrode and source/drain application was demonstrated.

Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate

2006 ◽  
Vol 50 (2) ◽  
pp. 232-236 ◽  
Author(s):  
Shiyang Zhu ◽  
J. Singh ◽  
Chunxiang Zhu ◽  
A. Du ◽  
M.F. Li
Keyword(s):  
Schottky Barrier ◽  
Gate Dielectric ◽  
Metal Gate
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