Electrical parameters and series resistance analysis of Au/Y/p-InP/Pt Schottky barrier diode at room temperature

Author(s):  
L. Dasaradha Rao ◽  
V. Rajagopal Reddy
2015 ◽  
Vol 821-823 ◽  
pp. 563-566
Author(s):  
Hyun Jin Jung ◽  
Seung Bok Yun ◽  
In Ho Kang ◽  
Jeong Hyun Moon ◽  
Won Jeong Kim ◽  
...  

The influence of stacking faults (SFs) and triangular defects (TDs) on the electrical properties of 4H-SiC Schottky barrier diode (SBD) were investigated. The SF types and locations were distinguished and mapped by using room-temperature photoluminescence (PL) and optical microscope. SBDs were fabricated including the location of SF’s and TD’s. The effects of the types of defects and its area portion in the fabricated SBDs were also investigated. Based on the present data, 3C-TD has more harmful effect rather than the other SFs. The fabricated SBDs including SFs showed that increase of area portion of SF’s also resulted increase of specific on resistance of SBDs.


2019 ◽  
Vol 48 (46) ◽  
pp. 17388-17394 ◽  
Author(s):  
Subhendu Dhibar ◽  
Amiya Dey ◽  
Rajkumar Jana ◽  
Arpita Chatterjee ◽  
Gourab Kanti Das ◽  
...  

A monoethanolamine based Co(ii)-metallohydrogel can act as a Schottky barrier diode device and a catalyst for single-pot aryl–S bond formation at room temperature.


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