Surfaces and Interfaces: Physics and Electronics
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Surfaces and Interfaces: Physics and Electronics ◽

10.1016/b978-0-444-86784-1.50048-1 ◽

1983 ◽

pp. 640-644

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INJECTION DEPENDENCE OF QUASIBALLISTIC TRANSPORT IN GaAs AT 77 K

Surfaces and Interfaces: Physics and Electronics ◽

10.1016/b978-0-444-86784-1.50046-8 ◽

1983 ◽

pp. 623-636

Author(s):

P. HESTO

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ELECTRON MOBILITIES IN MODULATION-DOPED GaAs–(AlGa)As HETEROSTRUCTURES

Surfaces and Interfaces: Physics and Electronics ◽

10.1016/b978-0-444-86784-1.50040-7 ◽

1983 ◽

pp. 519-526 ◽

Cited By ~ 1

Author(s):

H.L. STÖRMER

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VALENCE-BAND DISCONTINUITIES FOR ABRUPT (110), (100), AND (111) ORIENTED Ge–GaAs HETEROJUNCTIONS

Surfaces and Interfaces: Physics and Electronics ◽

10.1016/b978-0-444-86784-1.50039-0 ◽

1983 ◽

pp. 513-518

Author(s):

J.R. WALDROP ◽

E.A. KRAUT ◽

S.P. KOWALCZYK ◽

R.W. GRANT

Keyword(s):

Valence Band

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EFFECT OF TEMPERATURE ON THE Ge/GaAs(110) INTERFACE FORMATION

Surfaces and Interfaces: Physics and Electronics ◽

10.1016/b978-0-444-86784-1.50038-9 ◽

1983 ◽

pp. 505-512

Author(s):

Ping CHEN ◽

D. BOLMONT ◽

C.A. SÉBENNE

Keyword(s):

Effect Of Temperature ◽

Interface Formation

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THE ELECTRON STATES IN THE Si(111)–Pd INTERFACE: TOWARDS A REASSESSMENT OF THE EXPERIMENTAL INFORMATION

Surfaces and Interfaces: Physics and Electronics ◽

10.1016/b978-0-444-86784-1.50026-2 ◽

1983 ◽

pp. 315-323

Author(s):

L. BRAICOVICH

Keyword(s):

Experimental Information ◽

Electron States

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SCHOTTKY BARRIER AMORPHOUS–CRYSTALLINE INTERFACE FORMATION

Surfaces and Interfaces: Physics and Electronics ◽

10.1016/b978-0-444-86784-1.50023-7 ◽

1983 ◽

pp. 250-263

Author(s):

Malcolm J. THOMPSON ◽

Robert J. NEMANICH ◽

Chuang Chuang TSAI

Keyword(s):

Schottky Barrier ◽

Interface Formation

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LOCAL STRUCTURE OF ADSORBATES ON SEMICONDUCTOR SURFACES USING SEXAFS: A BRIEF SUMMARY

Surfaces and Interfaces: Physics and Electronics ◽

10.1016/b978-0-444-86784-1.50020-1 ◽

1983 ◽

pp. 205-211

Author(s):

P.H. CITRIN ◽

J.E. ROWE

Keyword(s):

Local Structure ◽

Semiconductor Surfaces

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PHYSICS AND ELECTRONICS OF THE NOBLE-METAL/ELEMENTAL-SEMICONDUCTOR INTERFACE FORMATION: A STATUS REPORT

Surfaces and Interfaces: Physics and Electronics ◽

10.1016/b978-0-444-86784-1.50019-5 ◽

1983 ◽

pp. 169-204 ◽

Cited By ~ 2

Author(s):

G. LE LAY

Keyword(s):

Noble Metal ◽

Status Report ◽

Interface Formation ◽

Semiconductor Interface ◽

Elemental Semiconductor

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INTRODUCTION

Surfaces and Interfaces: Physics and Electronics ◽

10.1016/b978-0-444-86784-1.50005-5 ◽

1983 ◽

pp. ix-xi

Author(s):

Robert S. Bauer

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Surfaces and Interfaces: Physics and ElectronicsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Elsevier

SUBJECT INDEX

INJECTION DEPENDENCE OF QUASIBALLISTIC TRANSPORT IN GaAs AT 77 K

ELECTRON MOBILITIES IN MODULATION-DOPED GaAs–(AlGa)As HETEROSTRUCTURES

VALENCE-BAND DISCONTINUITIES FOR ABRUPT (110), (100), AND (111) ORIENTED Ge–GaAs HETEROJUNCTIONS

EFFECT OF TEMPERATURE ON THE Ge/GaAs(110) INTERFACE FORMATION

THE ELECTRON STATES IN THE Si(111)–Pd INTERFACE: TOWARDS A REASSESSMENT OF THE EXPERIMENTAL INFORMATION

SCHOTTKY BARRIER AMORPHOUS–CRYSTALLINE INTERFACE FORMATION

LOCAL STRUCTURE OF ADSORBATES ON SEMICONDUCTOR SURFACES USING SEXAFS: A BRIEF SUMMARY

PHYSICS AND ELECTRONICS OF THE NOBLE-METAL/ELEMENTAL-SEMICONDUCTOR INTERFACE FORMATION: A STATUS REPORT

INTRODUCTION

Surfaces and Interfaces: Physics and Electronics
Latest Publications