Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields

2018 ◽  
Vol 112 (6) ◽  
pp. 062101 ◽  
Author(s):  
An Xiang ◽  
Xingliang Xu ◽  
Lin Zhang ◽  
Zhiqiang Li ◽  
Juntao Li ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Electric Fields ◽  
Temperature Dependent ◽  
Silicon Dioxide Films ◽  
High Electric Fields

Calculations of Some Transport Coefficients in Simple Semiconductors at Low Temperatures and High Electric Fields

1971 ◽  
Vol 49 (7) ◽  
pp. 876-880 ◽  
Author(s):  
Jyoti Kamal ◽  
Satish Sharma
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Low Temperatures ◽  
Transport Coefficients ◽  
Drift Mobility ◽  
Temperature Dependent ◽  
Hall Constant ◽  
The Difference ◽  
High Electric Fields ◽  
Model Semiconductor

In this paper the authors have calculated Hall mobility, drift mobility, and Hall constant for a non-degenerate simple model semiconductor at low temperatures for an arbitrary electric field strength. Following Paranjape the modified distribution of phonons has been taken into account. The difference between the calculations of transport coefficients made by taking into account the modified phonon distribution and by not taking it into account is quite appreciable at high electric field. Calculations also show that for Ne = 1016/cm3 the mobility of electrons remains temperature dependent.

Tunneling Current in Thin Silicon Dioxide Films

1994 ◽  
Vol 342 ◽  
Author(s):  
Sufi Zafar ◽  
J. C. Poler ◽  
E. A. Irene ◽  
X. Xu ◽  
G. Haines ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Electric Fields ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Silicon Dioxide Films ◽  
Thin Silicon ◽  
Tunneling Currents ◽  
Dc Component ◽  
P Type

ABSTRACTTunneling currents through thin silicon dioxide films on p-type silicon are measured at electric fields greater than 5 MV/cm. At the onset of the Fowler-Nordheim tunneling, oscillations in the current are observed. These oscillations are used for characterizing oxide films grown by three different processes: rapid thermal chemical vapor deposition, rapid thermal oxidation and thermal oxidation. We have explored the correlation between the oscillatory tunneling currents and the breakdown fields, and find a low field dc component to correlate with the breakdown fields and obscure the oscillations.

Electrcn Trapping/Detrapping in Thin SiO2 Under High Fields

1985 ◽  
Vol 47 ◽  
Author(s):  
N. R. Wu ◽  
S. Chiao ◽  
C. Wang ◽  
B. Bhushan ◽  
C. Y. Yang
Keyword(s):  
Silicon Dioxide ◽  
Electric Fields ◽  
Local Field ◽  
Alternating Current ◽  
Electron Trapping ◽  
Oxide Breakdown ◽  
Breakdown Mechanism ◽  
Current Stressing ◽  
High Fields ◽  
High Electric Fields

ABSTRACTA constant alternating current stressing technique is employed to study the electron trapping and detrapping cha~acteristics within a layer of thin silicon dioxide (˜.100 Å). A two-charge centroid model is proposed to explain the trapping/detrapping phenomena under high electric fields. The oxide breakdown mechanism induced by the local field of trapped electrons is also discussed.

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

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