Breakdown mechanisms of thermally grown silicon dioxide at high electric fields

1988 ◽  
Vol 63 (3) ◽  
pp. 970-972 ◽  
Author(s):  
N. Klein
Keyword(s):  
Silicon Dioxide ◽  
Electric Fields ◽  
High Electric Fields ◽  
Thermally Grown

Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields

2018 ◽  
Vol 112 (6) ◽  
pp. 062101 ◽  
Author(s):  
An Xiang ◽  
Xingliang Xu ◽  
Lin Zhang ◽  
Zhiqiang Li ◽  
Juntao Li ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Electric Fields ◽  
Temperature Dependent ◽  
Silicon Dioxide Films ◽  
High Electric Fields

Electrcn Trapping/Detrapping in Thin SiO2 Under High Fields

1985 ◽  
Vol 47 ◽  
Author(s):  
N. R. Wu ◽  
S. Chiao ◽  
C. Wang ◽  
B. Bhushan ◽  
C. Y. Yang
Keyword(s):  
Silicon Dioxide ◽  
Electric Fields ◽  
Local Field ◽  
Alternating Current ◽  
Electron Trapping ◽  
Oxide Breakdown ◽  
Breakdown Mechanism ◽  
Current Stressing ◽  
High Fields ◽  
High Electric Fields

ABSTRACTA constant alternating current stressing technique is employed to study the electron trapping and detrapping cha~acteristics within a layer of thin silicon dioxide (˜.100 Å). A two-charge centroid model is proposed to explain the trapping/detrapping phenomena under high electric fields. The oxide breakdown mechanism induced by the local field of trapped electrons is also discussed.

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

High Field Electron Drift in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Drift Mobility ◽  
Time Range ◽  
Electron Drift ◽  
Parameter Change ◽  
Transient Photocurrent ◽  
Field Mobility ◽  
High Electric Fields ◽  
Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

Sign in / Sign up

Export Citation Format

Share Document