Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fields

1982 ◽  
Vol 11 (6) ◽  
pp. 1065-1082 ◽  
Author(s):  
T. H. Windhorn ◽  
L. W. Cook ◽  
G. E. Stillman
Keyword(s):  
Velocity Field ◽  
Electric Fields ◽  
Electron Velocity ◽  
Temperature Dependent ◽  
High Electric Fields

TEMPERATURE DEPENDENCE OF HIGH FIELD ELECTRON TRANSPORT PROPERTIES IN WURTZITE PHASE GaN FOR DEVICE MODELING

2008 ◽  
Vol 22 (22) ◽  
pp. 3915-3922 ◽  
Author(s):  
A. R. BINESH ◽  
H. ARABSHAHI ◽  
G. R. EBRAHIMI ◽  
M. REZAEE ROKN-ABADI
Keyword(s):  
Electron Transport ◽  
Electric Fields ◽  
Dominant Role ◽  
Electron Velocity ◽  
Differential Conductance ◽  
Device Modeling ◽  
Wurtzite Phase ◽  
Ensemble Monte Carlo ◽  
Electron Transport Properties ◽  
High Electric Fields

An ensemble Monte Carlo simulation has been used to model bulk electron transport at room and higher temperatures as a function of high electric fields. Electronic states within the conduction band valleys at the Γ1, U, M, Γ3 and K are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in GaN in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in GaN is less sensitive to temperature than in other III-V semiconductors like GaAs . So GaN devices are expected to be more tolerant to self-heating and high ambient temperature device modeling. Our steady state velocity-field characteristics are in fair agreement with other recent calculations.

ELECTRON VELOCITY AT HIGH ELECTRIC FIELDS IN AlGaAs/GaAs MODULATION-DOPED HETEROSTRUCTURES

1988 ◽  
pp. 337-340
Author(s):  
W.T. Masselink ◽  
N. Braslau ◽  
D. LaTulipe ◽  
W.I. Wangt ◽  
S.L. Wright
Keyword(s):  
Electric Fields ◽  
Electron Velocity ◽  
High Electric Fields

Electron velocity in Si and GaAs at very high electric fields

1980 ◽  
Vol 37 (9) ◽  
pp. 797-798 ◽  
Author(s):  
P. M. Smith ◽  
M. Inoue ◽  
Jeffrey Frey
Keyword(s):  
Electric Fields ◽  
Electron Velocity ◽  
High Electric Fields ◽  
Very High

Electron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructures

1988 ◽  
Vol 31 (3-4) ◽  
pp. 337-340 ◽  
Author(s):  
W.T. Masselink ◽  
N. Braslau ◽  
D. LaTulipe ◽  
W.I. Wang ◽  
S.L. Wright
Keyword(s):  
Electric Fields ◽  
Electron Velocity ◽  
High Electric Fields

Calculations of Some Transport Coefficients in Simple Semiconductors at Low Temperatures and High Electric Fields

1971 ◽  
Vol 49 (7) ◽  
pp. 876-880 ◽  
Author(s):  
Jyoti Kamal ◽  
Satish Sharma
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Low Temperatures ◽  
Transport Coefficients ◽  
Drift Mobility ◽  
Temperature Dependent ◽  
Hall Constant ◽  
The Difference ◽  
High Electric Fields ◽  
Model Semiconductor

In this paper the authors have calculated Hall mobility, drift mobility, and Hall constant for a non-degenerate simple model semiconductor at low temperatures for an arbitrary electric field strength. Following Paranjape the modified distribution of phonons has been taken into account. The difference between the calculations of transport coefficients made by taking into account the modified phonon distribution and by not taking it into account is quite appreciable at high electric field. Calculations also show that for Ne = 1016/cm3 the mobility of electrons remains temperature dependent.

HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES

2002 ◽  
Vol 12 (04) ◽  
pp. 1057-1081 ◽  
Author(s):  
S. M. KOMIRENKO ◽  
K. W. KIM ◽  
V. A. KOCHELAP ◽  
M. A. STROSCIO
Keyword(s):  
Electron Transport ◽  
Electric Fields ◽  
High Field ◽  
Transport Model ◽  
Group Iii Nitrides ◽  
Electron Velocity ◽  
Electron Velocity Distribution ◽  
Group Iii ◽  
Field Electron ◽  
High Electric Fields

We have investigated the problem of electron runaway at strong electric fields in polar semiconductors focusing on the nanoscale nitride-based heterostructures. A transport model which takes into account the main features of electrons injected in short devices under high electric fields is developed. The electron distribution as a function of the electron momenta and coordinate is analyzed. We have determined the critical field for the runaway regime and investigated this regime in detail. The electron velocity distribution over the device is studied at different fields. We have applied the model to the group-III nitrides: InN, GaN and AlN. For these materials, the basic parameters and characteristics of the high-field electron transport are obtained. We have found that the transport in the nitrides is always dissipative. However, in the runaway regime, energies and velocities of electrons increase with distance which results in average velocities higher than the peak velocity in bulk-like samples. We demonstrated that the runaway electrons are characterized by the extreme distribution function with the population inversion. A three-terminal heterostructure where the runaway effect can be detected and measured is proposed. We also have considered briefly different nitride-based small-feature-size devices where this effect can have an impact on the device performance.

Electron transport in AlN under high electric fields

2001 ◽  
Vol 693 ◽  
Author(s):  
Ramón Collazo ◽  
Raoul Schlesser ◽  
Amy Roskowski ◽  
Robert F. Davis ◽  
Z. Sitar
Keyword(s):  
Electron Transport ◽  
Energy Distribution ◽  
Electric Fields ◽  
Applied Field ◽  
Electron Velocity ◽  
Hot Electron ◽  
Energy Position ◽  
Aln Film ◽  
High Electric Fields ◽  
Hot Electron Transport

AbstractThe energy distribution of electrons transported through an intrinsic AlN film was directly measured as a function of the applied field, and AlN film thickness. Following the transport, electrons were extracted into vacuum through a semitransparent Au electrode and their energy distribution was measured using an electron spectrometer. Transport through films thicker than 95 nm and applied field between 200 kV/cm -350 kV/cm occurred as steady-state hot electron transport represented by a Maxwellian energy distribution, with a corresponding carrier temperature. At higher fields (470 kV/cm), intervalley scattering was evidenced by a multi-component energy distribution with a second peak at the energy position of the first satellite valley. Electron transport through films thinner than 95 nm demonstrated velocity overshoot under fields greater than 550 kV/cm. This was evidenced by a symmetric energy distribution centered at an energy above the conduction band minimum. This indicated that the drift component of the electron velocity was on the order of the “thermal” component. A transient length of less than 80 nm was deduced from these observations.

Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields

2018 ◽  
Vol 112 (6) ◽  
pp. 062101 ◽  
Author(s):  
An Xiang ◽  
Xingliang Xu ◽  
Lin Zhang ◽  
Zhiqiang Li ◽  
Juntao Li ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Electric Fields ◽  
Temperature Dependent ◽  
Silicon Dioxide Films ◽  
High Electric Fields
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