Simulation of Semiconductor Devices and Processes
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123

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Published By Springer Vienna

9783709173725, 9783709166574

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Challenges to Achieving Accurate Three-Dimensional Process Simulation

Simulation of Semiconductor Devices and Processes ◽

10.1007/978-3-7091-6657-4_1 ◽

1993 ◽

pp. 1-8 ◽

Cited By ~ 4

Author(s):

M. E. Law

Keyword(s):

Process Simulation ◽

Three Dimensional

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About Boltzmann Equations for Transport Modeling in Semiconductors

Simulation of Semiconductor Devices and Processes ◽

10.1007/978-3-7091-6657-4_3 ◽

1993 ◽

pp. 17-20

Author(s):

F. Poupaud

Keyword(s):

Transport Modeling ◽

Boltzmann Equations

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Mixed-Mode Multi-Dimensional Device and Circuit Simulation

Simulation of Semiconductor Devices and Processes ◽

10.1007/978-3-7091-6657-4_31 ◽

1993 ◽

pp. 129-132 ◽

Cited By ~ 8

Author(s):

J. Litsios ◽

S. Müller ◽

W. Fichtner

Keyword(s):

Mixed Mode ◽

Circuit Simulation

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Radiative Heat Transfer with Quasi Monte Carlo Methods

Simulation of Semiconductor Devices and Processes ◽

10.1007/978-3-7091-6657-4_92 ◽

1993 ◽

pp. 373-376

Author(s):

A. Kersch ◽

W. Morokoff

Keyword(s):

Heat Transfer ◽

Monte Carlo ◽

Radiative Heat Transfer ◽

Monte Carlo Methods ◽

Radiative Heat ◽

Quasi Monte Carlo

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3-D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors

Simulation of Semiconductor Devices and Processes ◽

10.1007/978-3-7091-6657-4_26 ◽

1993 ◽

pp. 109-112

Author(s):

E. Tomacruz ◽

M. Zuniga ◽

R. Guerrieri ◽

A. Neureuther ◽

A. Sangiovanni-Vicentelli

Keyword(s):

Diffusion Models ◽

Parallel Processors ◽

Massively Parallel ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Numerical Modeling of Electrothermal Effects in Semiconductor Devices

Simulation of Semiconductor Devices and Processes ◽

10.1007/978-3-7091-6657-4_71 ◽

1993 ◽

pp. 289-292

Author(s):

Y. Apanovich ◽

B. Cottle ◽

B. Freydin ◽

E. Lyumkis ◽

B. Polsky ◽

...

Keyword(s):

Numerical Modeling ◽

Semiconductor Devices ◽

Electrothermal Effects

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Numerical Simulation of Piezo-Hall Effects in n-Doped Silicon Magnetic Sensors

Simulation of Semiconductor Devices and Processes ◽

10.1007/978-3-7091-6657-4_93 ◽

1993 ◽

pp. 377-380 ◽

Cited By ~ 2

Author(s):

W. Allegretto ◽

A. Nathan ◽

T. Manku

Keyword(s):

Numerical Simulation ◽

Magnetic Sensors ◽

Hall Effects ◽

Doped Silicon

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Two Dimensional Monte Carlo Simulation of Ion Implantation in Crystalline Silicon Considering Damage Formation

Simulation of Semiconductor Devices and Processes ◽

10.1007/978-3-7091-6657-4_89 ◽

1993 ◽

pp. 361-364

Author(s):

A. Simionescu ◽

G. Hobler

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Ion Implantation ◽

Crystalline Silicon ◽

Two Dimensional

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Simulation of a Novel Scheme for 700–1000 V Wiring Applications

Simulation of Semiconductor Devices and Processes ◽

10.1007/978-3-7091-6657-4_87 ◽

1993 ◽

pp. 353-356

Author(s):

A. F. J. Murray ◽

W. A. Lane

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Model-Independent Distortion Analysis in SPICE Realized for Complex Modelled Bipolar and MOS Transistors

Simulation of Semiconductor Devices and Processes ◽

10.1007/978-3-7091-6657-4_85 ◽

1993 ◽

pp. 345-348

Author(s):

E. Klostermeier ◽

J. Wilk ◽

R. Laur

Keyword(s):

Mos Transistors ◽

Distortion Analysis ◽

Model Independent

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Simulation of Semiconductor Devices and ProcessesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Vienna

Challenges to Achieving Accurate Three-Dimensional Process Simulation

About Boltzmann Equations for Transport Modeling in Semiconductors

Mixed-Mode Multi-Dimensional Device and Circuit Simulation

Radiative Heat Transfer with Quasi Monte Carlo Methods

3-D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors

Numerical Modeling of Electrothermal Effects in Semiconductor Devices

Numerical Simulation of Piezo-Hall Effects in n-Doped Silicon Magnetic Sensors

Two Dimensional Monte Carlo Simulation of Ion Implantation in Crystalline Silicon Considering Damage Formation

Simulation of a Novel Scheme for 700–1000 V Wiring Applications

Model-Independent Distortion Analysis in SPICE Realized for Complex Modelled Bipolar and MOS Transistors

Simulation of Semiconductor Devices and Processes
Latest Publications