Electrcn Trapping/Detrapping in Thin SiO2 Under High Fields

1985 ◽  
Vol 47 ◽  
Author(s):  
N. R. Wu ◽  
S. Chiao ◽  
C. Wang ◽  
B. Bhushan ◽  
C. Y. Yang
Keyword(s):  
Silicon Dioxide ◽  
Electric Fields ◽  
Local Field ◽  
Alternating Current ◽  
Electron Trapping ◽  
Oxide Breakdown ◽  
Breakdown Mechanism ◽  
Current Stressing ◽  
High Fields ◽  
High Electric Fields

ABSTRACTA constant alternating current stressing technique is employed to study the electron trapping and detrapping cha~acteristics within a layer of thin silicon dioxide (˜.100 Å). A two-charge centroid model is proposed to explain the trapping/detrapping phenomena under high electric fields. The oxide breakdown mechanism induced by the local field of trapped electrons is also discussed.

VELOCITY DISTRIBUTION IN THE DUKE–RUBINSTEIN MODEL

2002 ◽  
Vol 13 (06) ◽  
pp. 829-835
Author(s):  
P. PAŚCIAK ◽  
M. J. KRAWCZYK ◽  
K. KUŁAKOWSKI
Keyword(s):  
Velocity Distribution ◽  
Electric Fields ◽  
Gel Electrophoresis ◽  
Dna Molecules ◽  
Mean Velocity ◽  
The Mean ◽  
High Fields ◽  
High Electric Fields

The Duke–Rubinstein model of gel electrophoresis is applied to calculate the velocity of DNA molecules. We have found that the velocity distribution becomes flat at high electric fields. Simultaneously, the percentage of immobile molecules increases. Effectively, the mean velocity starts to decrease at high fields. The field value, where the mean velocity is maximal, decreases with the molecule length. The results are compared with those from similar calculations obtained by Heukelum and Beljaars within the cage model.

Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields

2018 ◽  
Vol 112 (6) ◽  
pp. 062101 ◽  
Author(s):  
An Xiang ◽  
Xingliang Xu ◽  
Lin Zhang ◽  
Zhiqiang Li ◽  
Juntao Li ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Electric Fields ◽  
Temperature Dependent ◽  
Silicon Dioxide Films ◽  
High Electric Fields

scholarly journals Breakdown Mechanism of Different Sulphur Hexafluoride Gas Mixtures

2018 ◽  
Vol 2018 ◽  
pp. 1-4 ◽  
Author(s):  
E. Onal
Keyword(s):  
High Pressure ◽  
Thermal Properties ◽  
Electric Fields ◽  
Alternating Current ◽  
Gas Mixtures ◽  
Sulphur Hexafluoride ◽  
Circuit Breakers ◽  
Breakdown Mechanism ◽  
Liquefaction Temperature ◽  
Dielectric And Thermal Properties

Sulphur hexafluoride (SF6) gas and SF6 gas mixtures are widely used in gas-insulated systems (GIS) because they have good dielectric and thermal properties. Among the various gas mixtures investigated so far, SF6-air, SF6-CO2, and SF6-N2 are most used gas mixtures. Also, these mixtures have much technical superiority in GIS. These are nontoxic and nonflammable gases, and they have less sensitivity to nonuniformities and higher liquefaction temperature at high pressure. GIS, switchgears, circuit breakers, and substations are systems that work with alternating current and have nonuniform electric fields. For this reason, in this study the breakdown mechanisms of 0.125, 0.5, 1, and 20% SF6 gas mixtures with rod-plane configuration under AC voltage are investigated and explained breakdown mechanism.

Aqueous Electrophoretic Deposition at High Electric Fields

2009 ◽  
Vol 412 ◽  
pp. 33-38 ◽  
Author(s):  
Bram Neirinck ◽  
Jan Fransaer ◽  
Jef Vleugels ◽  
Omer Van der Biest
Keyword(s):  
Electric Fields ◽  
Electrophoretic Deposition ◽  
Direct Current ◽  
Theoretical Basis ◽  
Environmental Safety ◽  
Alternating Current ◽  
Green Density ◽  
Economic Perspective ◽  
High Electric Fields ◽  
Decomposition Of Water

From an environmental, safety and economic perspective water should be the solvent of choice for electrophoretic deposition under industrial circumstances. However, because of the electrolytic decomposition of water under the influence of direct current, the majority of EPD is carried out in non-aqueous solvents. In this work, experiments prove that deposits can be obtained from aqueous alumina suspensions while avoiding electrolysis of the medium by using unbalanced alternating current fields [1]. In addition it is shown that the formed deposits have a green density which is intrinsically higher than those formed by traditional DC EPD from ethanol based suspensions. A theoretical basis for both electrophoretic deposition by means of unbalanced alternating fields and the higher density of deposits formed by application of such fields is provided.

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

Mutagenic Potential of Alternating Current Electric Fields.

1997 ◽  
Author(s):  
John Obringer ◽  
Brandon Horne ◽  
Brian Kelchner
Keyword(s):  
Electric Fields ◽  
Alternating Current ◽  
Mutagenic Potential
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