Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics

A. F. Basile; T. Cramer; A. Kyndiah; F. Biscarini; B. Fraboni

doi:10.1063/1.4884855

Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics

Journal of Applied Physics ◽

10.1063/1.4884855 ◽

2014 ◽

Vol 115 (24) ◽

pp. 244504 ◽

Cited By ~ 3

Author(s):

A. F. Basile ◽

T. Cramer ◽

A. Kyndiah ◽

F. Biscarini ◽

B. Fraboni

Keyword(s):

Metal Oxide ◽

Transport Properties ◽

Analytical Modeling ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor

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Impact of Mechanical Stress on Hot-Carrier Lifetime and Time-Dependent Dielectric Breakdown in Downscaled Complimentary Metal–Oxide–Semiconductor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.021206 ◽

2009 ◽

Vol 48 (2) ◽

pp. 021206 ◽

Cited By ~ 1

Author(s):

Eiji Morifuji

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Carrier Lifetime ◽

Dielectric Breakdown ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Time Dependent Dielectric Breakdown

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Fracture-like nature of defects in the time-dependent dielectric breakdown of metal-oxide-semiconductor capacitors

Thin Solid Films ◽

10.1016/0040-6090(90)90024-8 ◽

1990 ◽

Vol 189 (1) ◽

pp. 39-43

Author(s):

R.K. Bhan ◽

S.K. Lomash ◽

P.C. Mathur

Keyword(s):

Metal Oxide ◽

Dielectric Breakdown ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Time Dependent Dielectric Breakdown

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Analytical modeling of a split-gate dielectric modulated metal-oxide-semiconductor field-effect transistor for application as a biosensor

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) ◽

10.1109/icdcsyst.2014.6926183 ◽

2014 ◽

Cited By ~ 3

Author(s):

Ajay ◽

Rakhi Narang ◽

Manoj Saxena ◽

Mridula Gupta

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Tunneling transport properties for metal-oxide-semiconductor diode consisting of ferromagnetic ZnMnO nanocrystals

Applied Physics Letters ◽

10.1063/1.3507894 ◽

2010 ◽

Vol 97 (18) ◽

pp. 182103 ◽

Cited By ~ 11

Author(s):

Sejoon Lee ◽

Youngmin Lee ◽

Yoon Shon ◽

Deuk Young Kim ◽

Tae Won Kang

Keyword(s):

Metal Oxide ◽

Transport Properties ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Diode ◽

Tunneling Transport

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Electron transport properties of indium oxide – indium nitride metal-oxide-semiconductor heterostructures

physica status solidi (c) ◽

10.1002/pssc.200777455 ◽

2008 ◽

Vol 5 (2) ◽

pp. 495-498 ◽

Cited By ~ 4

Author(s):

V. Lebedev ◽

Ch. Y. Wang ◽

S. Hauguth ◽

V. Polyakov ◽

F. Schwierz ◽

...

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Transport Properties ◽

Indium Oxide ◽

Indium Nitride ◽

Metal Oxide Semiconductor ◽

Semiconductor Heterostructures ◽

Oxide Semiconductor ◽

Electron Transport Properties

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Polarity dependent thermochemical E-model for describing time dependent dielectric breakdown in metal-oxide-semiconductor devices with hyper-thin gate dielectrics

Journal of Applied Physics ◽

10.1063/1.4962320 ◽

2016 ◽

Vol 120 (10) ◽

pp. 104102 ◽

Cited By ~ 4

Author(s):

J. W. McPherson

Keyword(s):

Metal Oxide ◽

Dielectric Breakdown ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Time Dependent Dielectric Breakdown

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Analytical modeling of tunneling current through SiO[sub 2]–HfO[sub 2] stacks in metal oxide semiconductor structures

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3043539 ◽

2009 ◽

Vol 27 (1) ◽

pp. 338 ◽

Cited By ~ 10

Author(s):

J. Coignus ◽

R. Clerc ◽

C. Leroux ◽

G. Reimbold ◽

G. Ghibaudo ◽

...

Keyword(s):

Metal Oxide ◽

Analytical Modeling ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Time‐dependent changes of parasitic effects induced by high‐field electron injection in metal‐oxide‐semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.347700 ◽

1991 ◽

Vol 69 (1) ◽

pp. 528-530

Author(s):

Yasushiro Nishioka ◽

Masataka Kato ◽

Yuzuru Ohji ◽

T. P. Ma

Keyword(s):

Metal Oxide ◽

High Field ◽

Electron Injection ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Field Electron ◽

Parasitic Effects

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Soft breakdown characteristics of ultralow-k time-dependent dielectric breakdown for advanced complementary metal-oxide semiconductor technologies

Journal of Applied Physics ◽

10.1063/1.3476292 ◽

2010 ◽

Vol 108 (5) ◽

pp. 054107 ◽

Cited By ~ 16

Author(s):

Fen Chen ◽

Michael Shinosky

Keyword(s):

Metal Oxide ◽

Dielectric Breakdown ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Time Dependent Dielectric Breakdown ◽

Soft Breakdown

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Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors during Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.409 ◽

2003 ◽

Vol 42 (Part 1, No. 2A) ◽

pp. 409-413 ◽

Cited By ~ 5

Author(s):

Shih-hui Chen ◽

Jeng Gong ◽

Meng-chyi Wu ◽

Tsung-yi Huang ◽

Jei-feng Huang ◽

...

Keyword(s):

Metal Oxide ◽

High Voltage ◽

Field Effect ◽

Series Resistance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress

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