Soft breakdown characteristics of ultralow-k time-dependent dielectric breakdown for advanced complementary metal-oxide semiconductor technologies

2010 ◽  
Vol 108 (5) ◽  
pp. 054107 ◽  
Author(s):  
Fen Chen ◽  
Michael Shinosky
Keyword(s):  
Metal Oxide ◽  
Dielectric Breakdown ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Time Dependent ◽  
Oxide Semiconductor ◽  
Time Dependent Dielectric Breakdown ◽  
Soft Breakdown

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)

2008 ◽  
Vol 600-603 ◽  
pp. 791-794 ◽  
Author(s):  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Dielectric Breakdown ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability

The channel mobility and oxide reliability of metal-oxide-semiconductor field-effect transistors (MOSFETs) on 4H-SiC (0001) carbon face were investigated. The gate oxide was fabricated by using dry-oxidized film followed by pyrogenic reoxidation annealing (ROA). Significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. Furthermore, the field-effect inversion channel mobility (μFE) of MOSFETs fabricated by using pyrogenic ROA was as high as that of conventional 4H-SiC (0001) MOSFETs having the pyrogenic-oxidized gate oxide. It is suggested that the pyrogenic ROA of dry oxide as a method of gate oxide fabrication satisfies both channel mobility and oxide reliability on 4H-SiC (0001) carbon-face MOSFETs.

Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4o Off-Axis Si-Face 4H-SiC Epitaxial Wafers

2014 ◽  
Vol 778-780 ◽  
pp. 611-614 ◽  
Author(s):  
Akira Bandoh ◽  
Kenji Suzuki ◽  
Yoshihiko Miyasaka ◽  
Hiroshi Osawa ◽  
Takayuki Sato
Keyword(s):  
Epitaxial Growth ◽  
Dielectric Breakdown ◽  
Metal Oxide Semiconductor ◽  
Time Dependent ◽  
Oxide Semiconductor ◽  
Mos Capacitor ◽  
Step Bunching ◽  
Time Dependent Dielectric Breakdown ◽  
Substrate Properties ◽  
Reduced Time

The step-bunching dependence of the lifetime of metal–oxide–semiconductor capacitors on 4° off-axis 4H-SiC epitaxial wafers was investigated. The effects of the C/Si ratios in epitaxial growth and the substrate properties were examined. Step-bunching was observed at the base of triangle or trapezoid defects. Step-bunching decreased as the C/Si ratio was reduced. Time-dependent dielectric breakdown (TDDB) measurements showed that the locations of short lifetime breakdowns closely matched step-bunching positions. TDDB measurements of four different commercial substrates showed clear differences in capacitor lifetime.

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