Time‐dependent changes of parasitic effects induced by high‐field electron injection in metal‐oxide‐semiconductor transistors

Yasushiro Nishioka; Masataka Kato; Yuzuru Ohji; T. P. Ma

doi:10.1063/1.347700

Time‐dependent changes of parasitic effects induced by high‐field electron injection in metal‐oxide‐semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.347700 ◽

1991 ◽

Vol 69 (1) ◽

pp. 528-530

Author(s):

Yasushiro Nishioka ◽

Masataka Kato ◽

Yuzuru Ohji ◽

T. P. Ma

Keyword(s):

Metal Oxide ◽

High Field ◽

Electron Injection ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Field Electron ◽

Parasitic Effects

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Effects of high field electron injection into the gate oxide ofP‐channel metal–oxide–semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.354292 ◽

1993 ◽

Vol 74 (8) ◽

pp. 5078-5085 ◽

Cited By ~ 1

Author(s):

J. M. Moragues ◽

J. Oualid ◽

R. Jerisian ◽

E. Ciantar

Keyword(s):

Metal Oxide ◽

High Field ◽

Gate Oxide ◽

Electron Injection ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Field Electron

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A Model for Threshold Voltage Shift under Positive and Negative High-Field Electron Injection in Complementary Metal-Oxide-Semiconductor (CMOS) Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.969 ◽

1995 ◽

Vol 34 (Part 1, No. 2B) ◽

pp. 969-972 ◽

Cited By ~ 13

Author(s):

Tomasz Broż ◽

Y. David Chan ◽

Chand R. Viswanathan

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

High Field ◽

Complementary Metal Oxide Semiconductor ◽

Electron Injection ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Field Electron

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Comparison of interface positive charge generated in metal‐oxide‐silicon devices by high‐field electron injection and x‐ray irradiation

Applied Physics Letters ◽

10.1063/1.98582 ◽

1987 ◽

Vol 51 (20) ◽

pp. 1643-1644

Author(s):

D. B. Mott ◽

S. P. Buchner

Keyword(s):

Metal Oxide ◽

High Field ◽

Positive Charge ◽

Electron Injection ◽

X Ray ◽

Silicon Devices ◽

Field Electron ◽

Metal Oxide Silicon

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Impact of Mechanical Stress on Hot-Carrier Lifetime and Time-Dependent Dielectric Breakdown in Downscaled Complimentary Metal–Oxide–Semiconductor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.021206 ◽

2009 ◽

Vol 48 (2) ◽

pp. 021206 ◽

Cited By ~ 1

Author(s):

Eiji Morifuji

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Carrier Lifetime ◽

Dielectric Breakdown ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Time Dependent Dielectric Breakdown

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Threshold energies of high‐field‐induced hole currents and positive charges in SiO2layers of metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.358479 ◽

1994 ◽

Vol 76 (10) ◽

pp. 5795-5799 ◽

Cited By ~ 13

Author(s):

Xiaoping Gao ◽

Sinclair S. Yee

Keyword(s):

Metal Oxide ◽

High Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Threshold Energies

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Fracture-like nature of defects in the time-dependent dielectric breakdown of metal-oxide-semiconductor capacitors

Thin Solid Films ◽

10.1016/0040-6090(90)90024-8 ◽

1990 ◽

Vol 189 (1) ◽

pp. 39-43

Author(s):

R.K. Bhan ◽

S.K. Lomash ◽

P.C. Mathur

Keyword(s):

Metal Oxide ◽

Dielectric Breakdown ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Time Dependent Dielectric Breakdown

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Hot-electron injection in stacked-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1890445 ◽

2005 ◽

Vol 97 (10) ◽

pp. 104501

Author(s):

M. P. Temple ◽

D. W. Dyke ◽

P. A. Childs

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Injection ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Hot Electron Injection

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Latent Damage Generation in Thin Oxides of Metal-Oxide-Semiconductor Devices under High-Field Impulse Stress and Damage Characterization Using Low-Frequency Noise Measurement

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.6770 ◽

2001 ◽

Vol 40 (Part 1, No. 12) ◽

pp. 6770-6777 ◽

Cited By ~ 3

Author(s):

Wai Kin Chim ◽

Peng Soon Lim

Keyword(s):

Metal Oxide ◽

High Field ◽

Semiconductor Devices ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Noise Measurement ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Damage Characterization

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A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1826213 ◽

2005 ◽

Vol 97 (1) ◽

pp. 014503 ◽

Cited By ~ 9

Author(s):

Mun-Soo Park ◽

Inmook Na ◽

Chu R. Wie

Keyword(s):

Ionizing Radiation ◽

Metal Oxide ◽

Field Effect ◽

High Field ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Power ◽

Field Stress ◽

Stress Effects

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Structural damage at the Si/SiO2interface resulting from electron injection in metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.95534 ◽

1985 ◽

Vol 46 (6) ◽

pp. 550-552 ◽

Cited By ~ 22

Author(s):

R. E. Mikawa ◽

P. M. Lenahan

Keyword(s):

Metal Oxide ◽

Structural Damage ◽

Semiconductor Devices ◽

Electron Injection ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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