Polarity dependent thermochemical E-model for describing time dependent dielectric breakdown in metal-oxide-semiconductor devices with hyper-thin gate dielectrics

2016 ◽  
Vol 120 (10) ◽  
pp. 104102 ◽  
Author(s):  
J. W. McPherson
Keyword(s):  
Metal Oxide ◽  
Dielectric Breakdown ◽  
Gate Dielectrics ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Time Dependent ◽  
Oxide Semiconductor ◽  
Time Dependent Dielectric Breakdown

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

2008 ◽  
Vol 103 (1) ◽  
pp. 014506 ◽  
Author(s):  
G. Mavrou ◽  
S. Galata ◽  
P. Tsipas ◽  
A. Sotiropoulos ◽  
Y. Panayiotatos ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Gate Dielectrics ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)

2008 ◽  
Vol 600-603 ◽  
pp. 791-794 ◽  
Author(s):  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Dielectric Breakdown ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability

The channel mobility and oxide reliability of metal-oxide-semiconductor field-effect transistors (MOSFETs) on 4H-SiC (0001) carbon face were investigated. The gate oxide was fabricated by using dry-oxidized film followed by pyrogenic reoxidation annealing (ROA). Significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. Furthermore, the field-effect inversion channel mobility (μFE) of MOSFETs fabricated by using pyrogenic ROA was as high as that of conventional 4H-SiC (0001) MOSFETs having the pyrogenic-oxidized gate oxide. It is suggested that the pyrogenic ROA of dry oxide as a method of gate oxide fabrication satisfies both channel mobility and oxide reliability on 4H-SiC (0001) carbon-face MOSFETs.

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