Analytical modeling of tunneling current through SiO[sub 2]–HfO[sub 2] stacks in metal oxide semiconductor structures

2009 ◽  
Vol 27 (1) ◽  
pp. 338 ◽  
Author(s):  
J. Coignus ◽  
R. Clerc ◽  
C. Leroux ◽  
G. Reimbold ◽  
G. Ghibaudo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Analytical Modeling ◽  
Tunneling Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Analytical model for the 1∕f noise in the tunneling current through metal-oxide-semiconductor structures

2009 ◽  
Vol 106 (7) ◽  
pp. 073710 ◽  
Author(s):  
F. Crupi ◽  
G. Giusi ◽  
G. Iannaccone ◽  
P. Magnone ◽  
C. Pace ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Analytical Model ◽  
Tunneling Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
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