Preparation of hydrogenated amorphous germanium nitrogen alloys by plasma enhanced chemical vapor deposition

1996 ◽  
Vol 80 (8) ◽  
pp. 4703-4706 ◽  
Author(s):  
Jun Xu ◽  
Kunji Chen ◽  
Duan Feng ◽  
Seiichi Miyazaki ◽  
Masataka Hirose
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Germanium ◽  
Hydrogenated Amorphous ◽  
Hydrogenated Amorphous Germanium

Raman and Ft‐Ir Study on Structure and Its Stability of Hydrogenated Amorphous Germanium‐Nitrogen Alloys

1996 ◽  
Vol 446 ◽  
Author(s):  
Jun Xu ◽  
Kunji Chen ◽  
Duan Feng ◽  
Seiichi Miyazaki ◽  
Masataka Hirose
Keyword(s):  
Thermal Stability ◽  
Fourier Transform ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Germanium ◽  
Ft Ir ◽  
Ir Study ◽  
Hydrogenated Amorphous ◽  
Hydrogenated Amorphous Germanium ◽  
Infrared Techniques

AbstractA series of hydrogenated amorphous germanium‐nitrogen (a‐GeN:H) alloys have been synthesized by plasma enhanced chemical vapor deposition. The structure and its thermal stability have been investigated by means of Raman Scattering and Fourier Transform Infrared techniques. It was found that the structure is changed from Ge‐Ge‐like to Ge‐N‐like when the nitrogen content x in a‐Ge1‐xNx:H is larger than 0.3. Some a‐GeN:H alloys were annealed for 30min at different temperature and it is shown that the film structural stability is significantly improved compared with pure a‐Ge:H film.

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

Growth and thermal annealing of amorphous germanium carbide obtained by X-ray chemical vapor deposition

2013 ◽  
Vol 48 (18) ◽  
pp. 6357-6366 ◽  
Author(s):  
C. Demaria ◽  
P. Benzi ◽  
A. Arrais ◽  
E. Bottizzo ◽  
P. Antoniotti ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Germanium ◽  
X Ray ◽  
Germanium Carbide
Sign in / Sign up

Export Citation Format

Share Document