Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition

2010 ◽  
Vol 107 (4) ◽  
pp. 043503 ◽  
Author(s):  
I. Crupi ◽  
S. Mirabella ◽  
D. D’Angelo ◽  
S. Gibilisco ◽  
A. Grasso ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Hall Effect ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Effect of Nano-Structures on the Optical Features of Hydrogenated Amorphous Si Films

2006 ◽  
Vol 510-511 ◽  
pp. 954-957
Author(s):  
Myung Beom Park ◽  
Jae Hyun Shim ◽  
Nam Hee Cho
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Nano Structure ◽  
Nano Structures ◽  
Light Region ◽  
Amorphous Si ◽  
Si Films ◽  
Hydrogenated Amorphous

Hydrogenated amorphous Si (a-Si:H) films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques, and the effect of nano-structure on the photoluminescence (PL) phenomena of the films was investigated. The films, which were prepared at R.T., contain both amorphous and crystalline phases of 1 ~ 3 nm size nano-crystallites with {100} orientation preference while the films prepared at 500°C are composed of about 6 nm and 150 nm size crystallites. The former exhibit a strong PL intensity near blue light region, while the latter exhibiting little PL phenomena; also, the optical band gap of the former was calculated at 4.2 eV.

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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