Effects of high‐current pulses on polycrystalline silicon diode withn‐type region heavily doped with both boron and phosphorus

1982 ◽  
Vol 53 (7) ◽  
pp. 5359-5360 ◽  
Author(s):  
O‐Hyun Kim ◽  
Choong‐Ki Kim
Keyword(s):  
Polycrystalline Silicon ◽  
High Current ◽  
Type Region ◽  
Silicon Diode ◽  
Current Pulses ◽  
Heavily Doped

Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide

2017 ◽  
Vol 64 (8) ◽  
pp. 3167-3173 ◽  
Author(s):  
Bo-Wei Chen ◽  
Hsin-Lu Chen ◽  
Ting-Chang Chang ◽  
Yu-Ju Hung ◽  
Shin-Ping Huang ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
High Current ◽  
Systematic Analysis ◽  
Silicon Transistors

Electron emission characteristics of the porous polycrystalline silicon diode

2002 ◽  
Vol 2 (3) ◽  
pp. 233-235 ◽  
Author(s):  
Hoon Kim ◽  
Jong-Won Park ◽  
Joo-Won Lee ◽  
Yun-Hi Lee ◽  
Yoon-Ho Song ◽  
...  
Keyword(s):  
Electron Emission ◽  
Polycrystalline Silicon ◽  
Emission Characteristics ◽  
Silicon Diode ◽  
Porous Polycrystalline

Superconducting Properties of Nb3Sn with High Carbon Doping

1973 ◽  
Vol 28 (2) ◽  
pp. 318-319 ◽  
Author(s):  
G. Ziegler
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Carbon Doping ◽  
High Current ◽  
Superconducting Properties ◽  
High Carbon ◽  
Superconducting Compound ◽  
Heavily Doped ◽  
Very High

The superconducting compound Nb3Sn was heavily doped with carbon during chemical vapour deposition and then annealed. Very high current carrying capacities could be attained by this method (3.2 × 106 A/cm2 at 5 T).

Ultra-Fast NiSi2 Formation in p+-Si by High Current Densities

1998 ◽  
Vol 527 ◽  
Author(s):  
J.S. Huang ◽  
K.N. Tu
Keyword(s):  
Room Temperature ◽  
Line Length ◽  
Line Formation ◽  
High Current ◽  
Subsequent Growth ◽  
Applied Current ◽  
Electron Hole ◽  
Current Densities ◽  
Heavily Doped ◽  
Hole Recombination

ABSTRACTAn ultra-fast lateral formation of epitaxial NiSi2 line in heavily doped p+-Si diffused tub was created at room temperature ambient under the application of current densities of 106 A/cm2. A NiSi2 line of 140 μm long and I μm wide linking the cathode and anode contacts to p+-Si was formed within 1 second. Shorter lines were formed with lower current densities. The formation of shorter lines was again completed within 1 second and there was very little subsequent growth upon further stressing. The line length strongly depends upon applied current which tend to suggest that the line formation is limited by driving force rather than by kinetics. We propose that the ultra-fast silicide formation is a result of Ni interstitial diffusion in Si induced by electron-hole recombination heating and electromigration.

Electrical properties of heavily doped polycrystalline silicon-germanium films

1994 ◽  
Vol 41 (2) ◽  
pp. 228-232 ◽  
Author(s):  
T.-J. King ◽  
J.P. McVittie ◽  
K.C. Saraswat ◽  
J.R. Pfiester
Keyword(s):  
Electrical Properties ◽  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Heavily Doped ◽  
Germanium Films

scholarly journals Single-electron effects in heavily doped polycrystalline silicon nanowires

1998 ◽  
Vol 73 (8) ◽  
pp. 1113-1115 ◽  
Author(s):  
Andrew C. Irvine ◽  
Zahid A. K. Durrani ◽  
Haroon Ahmed ◽  
Serge Biesemans
Keyword(s):  
Silicon Nanowires ◽  
Polycrystalline Silicon ◽  
Single Electron ◽  
Heavily Doped ◽  
Electron Effects
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