Ultra-Fast NiSi2 Formation in p+-Si by High Current Densities

1998 ◽  
Vol 527 ◽  
Author(s):  
J.S. Huang ◽  
K.N. Tu

ABSTRACTAn ultra-fast lateral formation of epitaxial NiSi2 line in heavily doped p+-Si diffused tub was created at room temperature ambient under the application of current densities of 106 A/cm2. A NiSi2 line of 140 μm long and I μm wide linking the cathode and anode contacts to p+-Si was formed within 1 second. Shorter lines were formed with lower current densities. The formation of shorter lines was again completed within 1 second and there was very little subsequent growth upon further stressing. The line length strongly depends upon applied current which tend to suggest that the line formation is limited by driving force rather than by kinetics. We propose that the ultra-fast silicide formation is a result of Ni interstitial diffusion in Si induced by electron-hole recombination heating and electromigration.

2007 ◽  
Vol 2007 ◽  
pp. 1-7 ◽  
Author(s):  
Pushpendra Kumar ◽  
L. K. Malhotra

A 55 nm samarium film capped with a 10 nm palladium overlayer switched from a metallic reflecting to a semiconducting, transparent in visible state during ex-situ hydrogen loading via electrochemical means in 1 M KOH electrolytic aqueous solution at room temperature. The switching between metal to semiconductor was accompanied by measurement of transmittance during hydrogen loading/unloading. The effect of current density on switching and thermodynamic properties was studied between dihydride state (FCC phase) and trihydride state (hexagonal phase). From the plateau of partial pressure of hydrogen atx=2.6, enthalpy of formation was calculated at different current densities. The diffusion coefficients and switching kinetics are shown to depend on applied current density.


1993 ◽  
Vol 297 ◽  
Author(s):  
Helena Gleskova ◽  
P.A. Morin ◽  
S. Wagner

The results of a study of the kinetics of the light-induced annealing of the deep-level defects in hydrogenated amorphous silicon (a-Si:H) are presented. They show that at elevated temperatures illumination increases the rate of annealing compared to annealing in the dark. We also detected light-induced annealing at room temperature. On the basis of a model in which the defects are generated by electron-hole recombination and annealing occurs through the action of a single carrier, we found values of 0.86 eV for the activation energy of the light-induced generation coefficient γ-1, and 1.23 eV for the light-induced annealing prefactor λ


2018 ◽  
Vol 11 (10) ◽  
pp. 2858-2864 ◽  
Author(s):  
Haiqing Zhou ◽  
Fang Yu ◽  
Qing Zhu ◽  
Jingying Sun ◽  
Fan Qin ◽  
...  

A robust oxygen-evolving electrocatalyst was developed using a room-temperature strategy for water splitting at high current densities with low voltages.


2003 ◽  
Vol 763 ◽  
Author(s):  
K. J. Price ◽  
A. Vasko ◽  
L. Gorrelland ◽  
A. D. Compaan

AbstractElectroluminescence (EL) from polycrystalline CdTe/CdS solar cells was studied over the temperature range – 30 C to 25 C. We are able to observe above-background EL at forward current densities as low as 3 mA/cm2, allowing us to explore the EL behavior at current-voltage regimes within the normal operating parameters of the device. The EL spectrum is very similar to the photoluminescence (PL) spectrum, and is independent of applied voltage. We show that the EL most likely originates from injected electron-hole recombination at the CdTe/CdS junction. The total EL intensity is found to vary as a power-law function of current, EL ∼ Ib, where I is the forward current density and b is a constant. The value of b varies from sample to sample and decreases with increasing temperature. EL intensity typically is much more sensitive to device deterioration with light soak stress than is cell efficiency.


1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.


1999 ◽  
Vol 40 (4-5) ◽  
pp. 123-130 ◽  
Author(s):  
S. Malato ◽  
J. Blanco ◽  
C. Richter ◽  
B. Milow ◽  
M. I. Maldonado

Particulate suspensions of TiO2 irradiated with natural solar tight in a large experimental plant catalyse the oxidation of organic contaminants. The problem in using TiO2 as a photocatalyst is electron/hole recombination. One strategy for inhibiting e−/h+ recombination is to add other (irreversible) electron acceptors to the reaction. In many highly toxic waste waters where degradation of organic pollutants is the major concern, the addition of an inorganic anion to enhance the organic degradation rate may be justified. For better results, these additives should fulfil the following criteria: dissociate into harmless by-products and lead to the formation of ·OH or other oxidising agents. In this paper, we attempt to demonstrate the optimum conditions for the treatment of commercial pesticide rinsates found in the wastewater produced by a pesticide container recycling plant. The experiments were performed in one of the pilot plants of the largest solar photocatalytic system in Europe, the Detoxification Plants of the Plataforma Solar de Almería (PSA), in Spain. After testing ten different commercial pesticides, results show that peroxydisulphate enhances the photocatalytic miniralization of all of them. This study is part of an extensive project focused on the design of a solar photocatalytic plant for decontamination of agricultural rinsates in Almería (Spain).


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