Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films

Y. C. Tai; C. H. Mastrangelo; R. S. Muller

doi:10.1063/1.339924

Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.339924 ◽

1988 ◽

Vol 63 (5) ◽

pp. 1442-1447 ◽

Cited By ~ 105

Author(s):

Y. C. Tai ◽

C. H. Mastrangelo ◽

R. S. Muller

Keyword(s):

Thermal Conductivity ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Heavily Doped ◽

Polycrystalline Silicon Films

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Erratum: ‘‘Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films’’ [J. Appl. Phys. 63, 1442 (1988)]

Journal of Applied Physics ◽

10.1063/1.344503 ◽

1989 ◽

Vol 66 (7) ◽

pp. 3420-3420 ◽

Cited By ~ 4

Author(s):

Y. C Tai ◽

C. H. Mastrangelo ◽

R. S. Muller

Keyword(s):

Thermal Conductivity ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Heavily Doped ◽

Polycrystalline Silicon Films

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Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.341065 ◽

1988 ◽

Vol 63 (7) ◽

pp. 2260-2266 ◽

Cited By ~ 271

Author(s):

Miltiadis K. Hatalis ◽

David W. Greve

Keyword(s):

Low Temperature ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Low Temperature Annealing ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films

Vacuum ◽

10.1016/0042-207x(89)90915-9 ◽

1989 ◽

Vol 39 (10) ◽

pp. 992

Keyword(s):

Low Temperature ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Low Temperature Annealing ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.372085 ◽

2000 ◽

Vol 87 (4) ◽

pp. 1734-1742 ◽

Cited By ~ 49

Author(s):

P. Petrik ◽

T. Lohner ◽

M. Fried ◽

L. P. Biró ◽

N. Q. Khánh ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical ◽

Ellipsometric Study ◽

Polycrystalline Silicon Films

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Annealing and oxidation behavior of low‐pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates

Journal of Applied Physics ◽

10.1063/1.339414 ◽

1987 ◽

Vol 62 (7) ◽

pp. 2830-2835 ◽

Cited By ~ 10

Author(s):

D. K. Sadana ◽

A. E. Morgan ◽

M. H. Norcott ◽

S. Naik

Keyword(s):

Polycrystalline Silicon ◽

Oxidation Behavior ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Influence of deposition pressure on the bulk and interface states in low pressure chemical vapor deposited polycrystalline silicon thin‐film transistors

Applied Physics Letters ◽

10.1063/1.111473 ◽

1994 ◽

Vol 64 (20) ◽

pp. 2709-2711 ◽

Cited By ~ 6

Author(s):

C. A. Dimitriadis ◽

D. H. Tassis ◽

N. A. Economou ◽

G. Giakoumakis

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Interface States ◽

Deposition Pressure ◽

Silicon Thin Film ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Current‐voltage characteristics ofn‐amorphous low‐pressure chemical vapor deposited silicon films onp‐crystalline silicon

Journal of Applied Physics ◽

10.1063/1.343614 ◽

1989 ◽

Vol 66 (12) ◽

pp. 5894-5900 ◽

Cited By ~ 1

Author(s):

N. Du ◽

S. Salkalachen ◽

J. Yao ◽

H. R. Froelich ◽

P. K. John ◽

...

Keyword(s):

Crystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Current Voltage ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Current Voltage Characteristics

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Effects of temperature and electrical stress on the performance of thin‐film transistors fabricated from undoped low‐pressure chemical vapor deposited polycrystalline silicon

Applied Physics Letters ◽

10.1063/1.100897 ◽

1989 ◽

Vol 54 (7) ◽

pp. 620-622 ◽

Cited By ~ 33

Author(s):

C. A. Dimitriadis ◽

P. A. Coxon

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Electrical Stress ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Effects Of Temperature

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Structural and electrical properties of polycrystalline silicon films deposited by low pressure chemical vapor deposition with and without plasma enhancement

Journal of Electronic Materials ◽

10.1007/bf02659023 ◽

1986 ◽

Vol 15 (5) ◽

pp. 279-285 ◽

Cited By ~ 8

Author(s):

J. -J. Hajjar ◽

R. Reif ◽

D. Adler

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Structural And Electrical Properties ◽

Pressure Chemical ◽

Polycrystalline Silicon Films ◽

Plasma Enhancement

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Effect of impurities on the grain growth of chemical vapor deposited polycrystalline silicon films

Materials Chemistry and Physics ◽

10.1016/0254-0584(82)90022-0 ◽

1983 ◽

Vol 9 (1-3) ◽

pp. 235-245 ◽

Cited By ~ 24

Author(s):

R. Angelucci ◽

M. Severi ◽

S. Solmi

Keyword(s):

Grain Growth ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Effect Of Impurities ◽

Polycrystalline Silicon Films

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