Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide

2017 ◽  
Vol 64 (8) ◽  
pp. 3167-3173 ◽  
Author(s):  
Bo-Wei Chen ◽  
Hsin-Lu Chen ◽  
Ting-Chang Chang ◽  
Yu-Ju Hung ◽  
Shin-Ping Huang ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
High Current ◽  
Systematic Analysis ◽  
Silicon Transistors

The effect of generation–recombination mechanisms on the transient behavior of polycrystalline silicon transistors

2005 ◽  
Vol 487 (1-2) ◽  
pp. 247-251 ◽  
Author(s):  
G.J. Papaioannou ◽  
A. Voutsas ◽  
M. Exarchos ◽  
D. Kouvatsos
Keyword(s):  
Polycrystalline Silicon ◽  
Transient Behavior ◽  
Silicon Transistors

Drain current overshoot transient in polycrystalline silicon transistors: The effect of hole generation mechanism

2006 ◽  
Vol 99 (2) ◽  
pp. 024511 ◽  
Author(s):  
M. Exarchos ◽  
G. J. Papaioannou ◽  
D. N. Kouvatsos ◽  
A. T. Voutsas
Keyword(s):  
Polycrystalline Silicon ◽  
Drain Current ◽  
Generation Mechanism ◽  
Silicon Transistors ◽  
Hole Generation

scholarly journals Solution-based polycrystalline silicon transistors produced on a paper substrate

2017 ◽  
Vol 1 (1) ◽  
Author(s):  
Miki Trifunovic ◽  
Paolo Maria Sberna ◽  
Tatsuya Shimoda ◽  
Ryoichi Ishihara
Keyword(s):  
Polycrystalline Silicon ◽  
Paper Substrate ◽  
Silicon Transistors

Explanation of ultra high current gain in silicon transistors

1963 ◽  
Vol 6 (5) ◽  
pp. 545-546
Author(s):  
S.D. Rosenbaum ◽  
A. Loro
Keyword(s):  
Current Gain ◽  
High Current ◽  
Silicon Transistors

Refractoriness of High-Current and Low Acceleration Voltage Arsenic-Ion Implanted Polycrystalline Silicon Against Fluorine Chemistry

1992 ◽  
Vol 279 ◽  
Author(s):  
Yasuyuki Saito
Keyword(s):  
Chemical Bonding ◽  
Polycrystalline Silicon ◽  
Vibration Suppression ◽  
Ion Beam ◽  
Silicon Film ◽  
Amorphous State ◽  
High Dose ◽  
High Current ◽  
Simple Assumption ◽  
Acceleration Voltage

ABSTRACTThe author observed that both high-current-ion-beam and low-accelerationvoltage arsenic-implanted polycrystalline silicon-film surfaces are resistant to radical-fluorine-gas-etching. If we accept the simple assumption that a depth profile of concentration distribution of the implanted high-dose As atoms in polycrystalline Si film can be expressed with a standardized distribution function in the previous report of S. Furukawa, H. matsumura, and H. Ishiwara [Jpn. J. Appl. Phys. 11, 134 (1972)], we can take the premise that the chemical bonding reaction itself between radical-fluorine atoms and silicon atoms is prevented rather than that the covering of an arsenic- metal thin layer like amorphous state prevents the chemical bonding- reaction. We present a model of the prevention Si-F bond formation by high-dose arsenic implantation at low acceleration voltage. The model seems to be related to potential barrier increase and lattice vibration suppression for electromagnetic force-phonon interaction.

Preparatory Procedures for Electron Microscopic Analysis at the Molecular Level of Resolution

1978 ◽  
Vol 36 (3) ◽  
pp. 516-520
Author(s):  
F.J. Sjostrand
Keyword(s):  
Electron Microscope ◽  
Molecular Level ◽  
Microscopic Analysis ◽  
Resolving Power ◽  
Cellular Structures ◽  
Electron Microscopic ◽  
Systematic Analysis ◽  
Technical Developments ◽  
Thin Sectioning ◽  
Obvious Reason

In the 1940's and 1950's electron microscopy conferences were attended with everybody interested in learning about the latest technical developments for one very obvious reason. There was the electron microscope with its outstanding performance but nobody could make very much use of it because we were lacking proper techniques to prepare biological specimens. The development of the thin sectioning technique with its perfectioning in 1952 changed the situation and systematic analysis of the structure of cells could now be pursued. Since then electron microscopists have in general become satisfied with the level of resolution at which cellular structures can be analyzed when applying this technique. There has been little interest in trying to push the limit of resolution closer to that determined by the resolving power of the electron microscope.

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