Thermal simulation of thin-film interconnect failure caused by high current pulses

1995 ◽  
Vol 42 (7) ◽  
pp. 1386-1388 ◽  
Author(s):  
Xiang Gui ◽  
K. Dew ◽  
M.J. Brett
2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC06
Author(s):  
Seunghyun Kim ◽  
Yong-Jin Park ◽  
Young-Chang Joo ◽  
Young-Bae Park

1997 ◽  
Vol 471 ◽  
Author(s):  
W. Eccleston

ABSTRACTThe drift of electrons in the channels of Thin Film Transistors is analysed for discrete grains separated by grain boundaries containing amorphous silicon. The model provides the relationship channel mobility and grain size. The relationship between drain current and the terminal voltages is also predicted. The model relates to normal high current region of transistor operation.


2005 ◽  
Vol 45 (2) ◽  
pp. 391-395 ◽  
Author(s):  
E. Misra ◽  
Md M. Islam ◽  
Mahbub Hasan ◽  
H.C. Kim ◽  
T.L. Alford

2017 ◽  
Vol 31 (18) ◽  
pp. 2064-2073 ◽  
Author(s):  
In-Keun Baek ◽  
Ranajoy Bhattacharya ◽  
Jeong Seok Lee ◽  
Seontae Kim ◽  
Dongpyo Hong ◽  
...  

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