Metal-Insulator-Semiconductor (MIS) Structure with AlN Dielectric

2009 ◽  
Author(s):  
A. Mahyuddin ◽  
Z. Hassan ◽  
K. Y. Cheong ◽  
Mohamad Rusop ◽  
Tetsuo Soga
Keyword(s):  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Evaluation Method For Infrared Focal Plane Arrays With Metal Insulator Semiconductor (MIS) Structure

1982 ◽  
Author(s):  
Yoshihiro Miyamoto ◽  
Tohru Maekawa ◽  
Toshiro Yamamoto ◽  
Kunihiro Tanikawa ◽  
Hiroshi Takigawa ◽  
...  
Keyword(s):  
Focal Plane ◽  
Evaluation Method ◽  
Focal Plane Arrays ◽  
Mis Structure ◽  
Infrared Focal Plane Arrays ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Electrical properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN metal–insulator–semiconductor (MIS) structure

2014 ◽  
Vol 29 (7) ◽  
pp. 075001 ◽  
Author(s):  
V Rajagopal Reddy ◽  
V Janardhanam ◽  
Jin-Woo Ju ◽  
Hyobong Hong ◽  
Chel-Jong Choi
Keyword(s):  
Electrical Properties ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

1996 ◽  
Vol 448 ◽  
Author(s):  
D.G. Park ◽  
D. M. Diatezua ◽  
Z. Chen ◽  
S. N. Mohammad ◽  
H. Morkoç
Keyword(s):  
Molecular Beam ◽  
Surface States ◽  
Chemical Vapor ◽  
Conduction Band Edge ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Field Excursion

AbstractWe present characteristics of Al/Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) interfaces grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) techniques . The density of the surface states in the high 1010 eV-1 cm-2 near the GaAs midgap for the GaAs grown at 575°C and 625°C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625°C, showing smoother surface morphology than the surface grown at 575 °C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K suggests that the traps be within 60 meV of the conduction band edge of GaAs.

scholarly journals Charge density at the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions

2017 ◽  
Vol 51 (12) ◽  
pp. 1682
Author(s):  
Slah Hlali ◽  
Neila Hizem ◽  
Adel Kalboussi
Keyword(s):  
Charge Density ◽  
Inversion Layer ◽  
Quantum Mechanical ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
High K ◽  
P Type ◽  
Different Thickness ◽  
Mechanical Charge

In this paper, a quantum correction computation of the inversion layer of charge density was investigated. This study is carried out for a one-dimensional Metal-Insulator-Semiconductor (MIS) structure with (100) oriented P-type silicon as substrate. The purpose of this paper is to point out the differences between the semiclassical and quantum-mechanical charge description at the interface Al2O3/Si, and to identify some electronic properties of our MIS device using different thickness of the high-k oxide and diverse temperature with different carrier statitics (Fermi--Dirak statitics and Boltzmann statitics). In particular, the calculations of capacitance voltage (C-V), sheet electron density, a relative position of subband energies and their wave functions are performed to examine qualitatively and quantitatively the electron states and charging mechanisms in our device. DOI: 10.21883/FTP.2017.12.45185.8190

Perovskite light-emitting devices with a metal–insulator–semiconductor structure and carrier tunnelling

2017 ◽  
Vol 5 (31) ◽  
pp. 7715-7719 ◽  
Author(s):  
Jing Li ◽  
Qianqian Yu ◽  
Lu Gan ◽  
Diyan Chen ◽  
Bin Lu ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Green Light ◽  
Semiconductor Structure ◽  
Mis Structure ◽  
Working Mechanism ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Light Emitting Devices

A CH3NH3PbBr3 perovskite LED based on a metal–insulator–semiconductor (MIS) structure emits green light and reveals a working mechanism of electron tunneling.

scholarly journals Prototype of Nitro Compound Vapor and Trace Detector Based on a Capacitive MIS Sensor

Sensors ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 1514 ◽  
Author(s):  
Nikolay Samotaev ◽  
Artur Litvinov ◽  
Maya Etrekova ◽  
Konstantin Oblov ◽  
Dmitrii Filipchuk ◽  
...  
Keyword(s):  
Detection Limit ◽  
Response Time ◽  
Gas Sensor ◽  
Nitro Compound ◽  
Structure Type ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Pyrolysis Method ◽  
Prototype Detector

A prototype of a nitro compound vapor and trace detector, which uses the pyrolysis method and a capacitive gas sensor based on the metal–insulator–semiconductor (MIS) structure type Pd–SiO2–Si, was developed and manufactured. It was experimentally established that the detection limit of trinitrotoluene trace for the detector prototype is 1 × 10−9 g, which corresponds to concentration from 10−11 g/cm3 to 10−12 g/cm3. The prototype had a response time of no more than 30 s. The possibility of further improving the characteristics of the prototype detector by reducing the overall dimensions and increasing the sensitivity of the MIS sensors is shown.

Depletion widths of the metal-insulator semiconductor (MIS) structure

1981 ◽  
Vol 24 (10) ◽  
pp. 949-954 ◽  
Author(s):  
Chein Wei Jen ◽  
Chung Len Lee ◽  
Tan Fu Lei
Keyword(s):  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
Sign in / Sign up

Export Citation Format

Share Document