Perovskite light-emitting devices with a metal–insulator–semiconductor structure and carrier tunnelling

2017 ◽  
Vol 5 (31) ◽  
pp. 7715-7719 ◽  
Author(s):  
Jing Li ◽  
Qianqian Yu ◽  
Lu Gan ◽  
Diyan Chen ◽  
Bin Lu ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Green Light ◽  
Semiconductor Structure ◽  
Mis Structure ◽  
Working Mechanism ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Light Emitting Devices

A CH3NH3PbBr3 perovskite LED based on a metal–insulator–semiconductor (MIS) structure emits green light and reveals a working mechanism of electron tunneling.

Flexible perovskite solar cells based on the metal–insulator–semiconductor structure

2016 ◽  
Vol 52 (71) ◽  
pp. 10791-10794 ◽  
Author(s):  
Jing Wei ◽  
Heng Li ◽  
Yicheng Zhao ◽  
Wenke Zhou ◽  
Rui Fu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Perovskite Solar Cells ◽  
Semiconductor Structure ◽  
Mis Structure ◽  
Blocking Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Hole Blocking Layer

All-low-temperature processed, highly flexible perovskite solar cells based on the MIS structure are fabricated, with ultra-thin Al2O3 as the hole-blocking layer.

Efficient organic manganese (II) bromide green-light-emitting diodes enabled by manipulating hole and electron transport layer

2021 ◽  
Author(s):  
Hyunsik Im ◽  
Atanu Jana ◽  
Vijaya Gopalan Sree ◽  
QIANKAI BA ◽  
Seong Chan Cho ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Transport Layer ◽  
Lead Free ◽  
Electron Transport Layer ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices

Lead-free, non-toxic transition metal-based phosphorescent organic–inorganic hybrid (OIH) compounds are promising for next-generation flat-panel displays and solid-state light-emitting devices. In the present study, we fabricate highly efficient phosphorescent green-light-emitting diodes...

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

1989 ◽  
Vol 168 (2) ◽  
pp. 157-163 ◽  
Author(s):  
B. Ullrich ◽  
F. Kuchar ◽  
R. Meisels ◽  
F. Olcaytug ◽  
A. Jachimowicz
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
P Type

Fabrication of Cone-Shaped Metal-Insulator-Semiconductor Electron Tunneling Cathode

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7176-7179 ◽  
Author(s):  
Kazunori Inoue ◽  
Yasuhito Gotoh ◽  
Hiroshi Tsuji ◽  
Junzo Ishikawa
Keyword(s):  
Electron Tunneling ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
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