Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor-like (MIS) structure for multiple-valued logic applications

1996 ◽  
Vol 32 (9) ◽  
pp. 1615-1619 ◽  
Author(s):  
Wen-Chau Liu ◽  
Lih-Wen Laih ◽  
Wen-Shiung Lour ◽  
Jun-Hui Tsai ◽  
Kun-Wei Lin ◽  
...  
Keyword(s):  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Multiple Valued Logic ◽  
Current Voltage

Evaluation Method For Infrared Focal Plane Arrays With Metal Insulator Semiconductor (MIS) Structure

1982 ◽  
Author(s):  
Yoshihiro Miyamoto ◽  
Tohru Maekawa ◽  
Toshiro Yamamoto ◽  
Kunihiro Tanikawa ◽  
Hiroshi Takigawa ◽  
...  
Keyword(s):  
Focal Plane ◽  
Evaluation Method ◽  
Focal Plane Arrays ◽  
Mis Structure ◽  
Infrared Focal Plane Arrays ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Electrical properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN metal–insulator–semiconductor (MIS) structure

2014 ◽  
Vol 29 (7) ◽  
pp. 075001 ◽  
Author(s):  
V Rajagopal Reddy ◽  
V Janardhanam ◽  
Jin-Woo Ju ◽  
Hyobong Hong ◽  
Chel-Jong Choi
Keyword(s):  
Electrical Properties ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

1996 ◽  
Vol 448 ◽  
Author(s):  
D.G. Park ◽  
D. M. Diatezua ◽  
Z. Chen ◽  
S. N. Mohammad ◽  
H. Morkoç
Keyword(s):  
Molecular Beam ◽  
Surface States ◽  
Chemical Vapor ◽  
Conduction Band Edge ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Field Excursion

AbstractWe present characteristics of Al/Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) interfaces grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) techniques . The density of the surface states in the high 1010 eV-1 cm-2 near the GaAs midgap for the GaAs grown at 575°C and 625°C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625°C, showing smoother surface morphology than the surface grown at 575 °C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K suggests that the traps be within 60 meV of the conduction band edge of GaAs.

scholarly journals Charge density at the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions

2017 ◽  
Vol 51 (12) ◽  
pp. 1682
Author(s):  
Slah Hlali ◽  
Neila Hizem ◽  
Adel Kalboussi
Keyword(s):  
Charge Density ◽  
Inversion Layer ◽  
Quantum Mechanical ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
High K ◽  
P Type ◽  
Different Thickness ◽  
Mechanical Charge

In this paper, a quantum correction computation of the inversion layer of charge density was investigated. This study is carried out for a one-dimensional Metal-Insulator-Semiconductor (MIS) structure with (100) oriented P-type silicon as substrate. The purpose of this paper is to point out the differences between the semiclassical and quantum-mechanical charge description at the interface Al2O3/Si, and to identify some electronic properties of our MIS device using different thickness of the high-k oxide and diverse temperature with different carrier statitics (Fermi--Dirak statitics and Boltzmann statitics). In particular, the calculations of capacitance voltage (C-V), sheet electron density, a relative position of subband energies and their wave functions are performed to examine qualitatively and quantitatively the electron states and charging mechanisms in our device. DOI: 10.21883/FTP.2017.12.45185.8190

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