Formation of ultrashallow junctions less than 10nm with the combination of low energy B ion implantation and laser annealing

2006 ◽  
Author(s):  
Ryuta Yamada ◽  
Singo Seto ◽  
Sosi Sato ◽  
Yuki Tanaka ◽  
Satoru Matumoto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Low Energy ◽  
Ultrashallow Junctions

Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2506-2507
Author(s):  
Jeonghee Cho ◽  
Seunghee Han ◽  
Yeonhee Lee ◽  
Ok Kyung Kim ◽  
Gon-Ho Kim ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Plasma Source ◽  
High Dose Rate ◽  
Low Energy ◽  
High Dose ◽  
Ultrashallow Junctions ◽  
Plasma Source Ion Implantation

Two-dimensional delineation of ultrashallow junctions obtained by ion implantation and excimer laser annealing

2000 ◽  
Vol 77 (4) ◽  
pp. 552-554 ◽  
Author(s):  
Vittorio Privitera ◽  
Corrado Spinella ◽  
Guglielmo Fortunato ◽  
Luigi Mariucci
Keyword(s):  
Ion Implantation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Two Dimensional ◽  
Excimer Laser Annealing ◽  
Ultrashallow Junctions

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

Special Aspects of High-Intensity Low-Energy Ion Implantation

2021 ◽  
Author(s):  
A. I. Ryabchikov ◽  
A. I. Ivanova ◽  
O. S. Korneva ◽  
D. O. Sivin
Keyword(s):  
Ion Implantation ◽  
High Intensity ◽  
Low Energy

Big channeling effects at low-energy ion implantation in silicon

1986 ◽  
Vol 97 (2) ◽  
pp. K135-K139 ◽  
Author(s):  
J. Bollmann ◽  
H. Klose ◽  
A. Mertens
Keyword(s):  
Ion Implantation ◽  
Low Energy

Conducting polymer formed by low energy gold ion implantation

2008 ◽  
Vol 93 (7) ◽  
pp. 073102 ◽  
Author(s):  
M. C. Salvadori ◽  
M. Cattani ◽  
F. S. Teixeira ◽  
I. G. Brown
Keyword(s):  
Ion Implantation ◽  
Conducting Polymer ◽  
Low Energy ◽  
Gold Ion
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