Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing

2008 ◽  
Vol 26 (1) ◽  
pp. 286 ◽  
Author(s):  
V. Vervisch ◽  
H. Etienne ◽  
F. Torregrosa ◽  
L. Roux ◽  
L. Ottaviani ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Ultrashallow Junctions ◽  
Plasma Immersion Ion Implantation

Formation of ultrashallow junctions less than 10nm with the combination of low energy B ion implantation and laser annealing

2006 ◽  
Author(s):  
Ryuta Yamada ◽  
Singo Seto ◽  
Sosi Sato ◽  
Yuki Tanaka ◽  
Satoru Matumoto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Low Energy ◽  
Ultrashallow Junctions

Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing

2012 ◽  
Author(s):  
F. Meirer ◽  
E. Demenev ◽  
D. Giubertoni ◽  
S. Gennaro ◽  
L. Vanzetti ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Silicon Oxide ◽  
Plasma Immersion Ion Implantation

Two-dimensional delineation of ultrashallow junctions obtained by ion implantation and excimer laser annealing

2000 ◽  
Vol 77 (4) ◽  
pp. 552-554 ◽  
Author(s):  
Vittorio Privitera ◽  
Corrado Spinella ◽  
Guglielmo Fortunato ◽  
Luigi Mariucci
Keyword(s):  
Ion Implantation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Two Dimensional ◽  
Excimer Laser Annealing ◽  
Ultrashallow Junctions

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

TiN/ZrO2 multilayers synthesized on GCr15 bearing steel using plasma immersion ion implantation and deposition

2007 ◽  
Vol 201 (15) ◽  
pp. 6615-6618 ◽  
Author(s):  
Tao Sun ◽  
Langping Wang ◽  
Yonghao Yu ◽  
Yuhang Wang ◽  
Xiaofeng Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Bearing Steel ◽  
Gcr15 Bearing Steel ◽  
Plasma Immersion Ion Implantation
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