Two-dimensional delineation of ultrashallow junctions obtained by ion implantation and excimer laser annealing

2000 ◽  
Vol 77 (4) ◽  
pp. 552-554 ◽  
Author(s):  
Vittorio Privitera ◽  
Corrado Spinella ◽  
Guglielmo Fortunato ◽  
Luigi Mariucci
Keyword(s):  
Ion Implantation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Two Dimensional ◽  
Excimer Laser Annealing ◽  
Ultrashallow Junctions

Ultrashallow P+/n junction formed by B[sub 18]H[sub 22]+] Ion Implantation and Excimer Laser Annealing

2006 ◽  
Author(s):  
Sungho Heo ◽  
Dongkyu Lee ◽  
H. T. Cho ◽  
W. A. Krull ◽  
Hyunsang Hwang
Keyword(s):  
Ion Implantation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Poly-Si Thin Film Transistors Fabricated By Employing Selective Si Ion-Implantation And Excimer Laser Annealing

2000 ◽  
Vol 609 ◽  
Author(s):  
Min-Cheol Lee ◽  
Jae-Hong Jeon ◽  
Jin-Woo Park ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Ion Implantation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Defect Density ◽  
Mask Pattern ◽  
Excimer Laser Annealing ◽  
Boundary Location ◽  
Si Ion Implantation ◽  
Annealing Method

ABSTRACTA new excimer laser annealing method is proposed in order to produce the poly-Si film with low defect density and large grain, by combining the selective Si ionimplantation and excimer laser annealing. Selective Si ion-implantation is employed to form artificial nucleation seeds in a-Si film prior to excimer laser annealing in order to increase the nucleation probability. The grain boundary location in poly-Si film has been controlled through implantation mask, and the grain size around micrometer order is obtained without any other process. TEM result shows that grain boundary is controlled according to mask pattern and the crystallinity of the poly-Si film is improved.

Epitaxial Regrowth of a-GaAs/(100) Silicon By Excimer Laser Annealing at 248 nm

1985 ◽  
Vol 53 ◽  
Author(s):  
A. Christou ◽  
T. Efthimiopoulos ◽  
G. Kyriakidis ◽  
C. Varmazis
Keyword(s):  
Energy Density ◽  
Ion Implantation ◽  
Excimer Laser ◽  
Field Effect ◽  
Laser Annealing ◽  
Field Effect Transistors ◽  
Critical Energy ◽  
Excimer Laser Annealing ◽  
Epitaxial Regrowth ◽  
Critical Energy Density

ABSTRACTExcimer laser annealing at 248 nm has resulted in the recrystallization of a-GaAs on (100) silicon. An AlAs encapsulation layer was found to be necessary to prevent the loss of arsenic during laser annealing. An energy density of 105 mJ/cm2 was the critical energy density which gave optimum results. Field effect transistors were fabricated on the regrown (100) GaAs utilizing ion implantation for the n-type channel, and resulted in a transconductance of 70–80 mS/mm.

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