scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

scholarly journals Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting

2003 ◽  
Vol 340-342 ◽  
pp. 908-912 ◽  
Author(s):  
M.A. Scarpulla ◽  
U. Daud ◽  
K.M. Yu ◽  
O. Monteiro ◽  
Z. Liliental-Weber ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Diluted Magnetic

Co and Al co-doping for ferromagnetism in ZnO:Co diluted magnetic semiconductors

2009 ◽  
Vol 21 (5) ◽  
pp. 056002 ◽  
Author(s):  
G S Chang ◽  
E Z Kurmaev ◽  
D W Boukhvalov ◽  
L D Finkelstein ◽  
A Moewes ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Co Doping ◽  
Diluted Magnetic

Novel Room-temperature Ferromagnetic Semiconductors Pb1-x-yCaxCryTe

2009 ◽  
Vol 1183 ◽  
Author(s):  
Evgeny P. Skipetrov ◽  
Elena A. Zvereva ◽  
Nikolay A. Pichugin ◽  
Alexey E. Primenko ◽  
Evgeny I. Slyn'ko ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Curie Temperature ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Impurity Level ◽  
Ferromagnetic Semiconductors ◽  
Magnetization Curves ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering

Abstract The galvanomagnetic and magnetic properties of novel diluted magnetic semiconductors Pb1-x-yCaxCryTe (x=0.06-0.20, y=0.003-0.045) have been investigated. Temperature dependencies of the resistivity and the Hall coefficient have a metallic character indicating the pinning of Fermi level by the chromium impurity level on the background of the conduction band states. Magnetization curves display a clear hysteresis loop over the whole temperature range investigated. The Curie temperature, determined from the temperature dependencies of magnetization, achieves 345 K. Possible mechanisms of ferromagnetic ordering were discussed.

scholarly journals Ferromagnetism With High Curie Temperature of Cu Doped LiMgN New Dilute Magnetic Semiconductors

2021 ◽  
Vol 7 ◽  
Author(s):  
Junquan Deng ◽  
Wuqing Yang ◽  
Aiyuan Hu ◽  
Peng Yu ◽  
Yuting Cui ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Density Functional ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Magnetic Moments ◽  
Dilute Magnetic Semiconductors ◽  
Mean Field Approximation ◽  
Half Metallic ◽  
Metallic Ferromagnetism ◽  
Half Metallic Ferromagnetism

New diluted magnetic semiconductors represented by Li(Zn,Mn)As with decoupled charge and spin doping have received much attention due to their potential applications for spintronics. However, their low Curie temperature seriously restricts the wide application of these spintronic devices. In this work, the electronic structures, ferromagnetic properties, formation energy, and Curie temperature of Cu doped LiMgN and the corresponding Li deficient system are calculated by using the first principles method based on density functional theory, combined with Heisenberg model in the Mean-Field Approximation. We find that the Cu doped systems have high temperature ferromagnetism, and the highest Curie temperature is up to 573K, much higher than the room temperature. Li(Mg0.875Cu0.125)N is a half metallic ferromagnet and its net magnetic moments are 2.0 μв. When Li is deficient, the half metallic ferromagnetism becomes stronger, the magnetic moments increase to 3.0 μв. The bonding and differential charge density indicate that the half metallic ferromagnetism can be mainly attributed to the strong hybridization between N 2p and doped Cu 3d orbitals. The results show that Cu doped LiMgN is a kind of ideal new dilute magnetic semiconductor that will benefit potential spintronics applications.

scholarly journals A substantial increase of Curie temperature in a new type of diluted magnetic semiconductors via effects of chemical pressure

APL Materials ◽  
2019 ◽  
Vol 7 (10) ◽  
pp. 101119 ◽  
Author(s):  
Shuang Yu ◽  
Guoqiang Zhao ◽  
Yi Peng ◽  
Xiaohong Zhu ◽  
Xiancheng Wang ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Chemical Pressure ◽  
New Type ◽  
Diluted Magnetic
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