Dose rate and thermal budget optimization for ultrashallow junctions formed by low-energy (2–5 keV) ion implantation

1996 ◽  
Vol 14 (1) ◽  
pp. 255 ◽  
Author(s):  
M. Craig
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Low Energy ◽  
Thermal Budget ◽  
Ultrashallow Junctions ◽  
Budget Optimization

Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2506-2507
Author(s):  
Jeonghee Cho ◽  
Seunghee Han ◽  
Yeonhee Lee ◽  
Ok Kyung Kim ◽  
Gon-Ho Kim ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Plasma Source ◽  
High Dose Rate ◽  
Low Energy ◽  
High Dose ◽  
Ultrashallow Junctions ◽  
Plasma Source Ion Implantation

Formation of ultrashallow junctions less than 10nm with the combination of low energy B ion implantation and laser annealing

2006 ◽  
Author(s):  
Ryuta Yamada ◽  
Singo Seto ◽  
Sosi Sato ◽  
Yuki Tanaka ◽  
Satoru Matumoto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Low Energy ◽  
Ultrashallow Junctions

Ultra-Low Energy Ion Implantation of Si into HfO2 and HfSiO-based Structures for Non Volatile Memory Applications

2010 ◽  
Vol 1250 ◽  
Author(s):  
Florence Gloux ◽  
Pierre-Eugène Coulon ◽  
Jesse Groenen ◽  
Sylvie Schamm ◽  
Gerard Benassayag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thin Layers ◽  
Low Energy ◽  
Electrical Measurements ◽  
Thermal Budget ◽  
Si Nanocrystals ◽  
Non Volatile Memory ◽  
Memory Applications ◽  
Anomalous Oxidation ◽  
Post Implantation

AbstractThe fabrication of Si nanocrystals (NCs) in multilayer structures based on HfO2 and alloys for memory applications is carried out using an innovative method, the ultra-low energy (1 keV) ion implantation followed by a post-implantation annealing. Si+ ions are implanted into SiO2 thin layers deposited on top of thin HfO2-based layers. After annealing at high temperature (1050°C), the implantation leads to the formation of a two dimensional array of Si NCs at a distance from the surface larger than expected, due to an anomalous oxidation of the implanted Si. Nevertheless, the best memory windows are obtained at lower thermal budget, when no nanocrystals are present in the layer. This suggests that electrical measurements should always be correlated to structural characterization in order to understand where charge storage occurs.

Damage Removal of Low Energy Ion Implanted BF2 Layers in Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
E. Myers ◽  
J. J. Hren
Keyword(s):  
Free Surface ◽  
Ion Implantation ◽  
Thermal Processing ◽  
Low Energy ◽  
Silicon Substrates ◽  
Dislocation Loops ◽  
Tem Analysis ◽  
Thermal Budget ◽  
Damage Location ◽  
Annealing Temperatures

AbstractRecent results indicate that thermal budgets associated with ion implantation induced end of range damage removal is affected by the presence of a free surface. Low energy BF2 implants (6 keV) were done into both single crystal and Ge preamorphized silicon substrates. Rapid thermal processing was used to study the residual end of range defect structure in the temperature range from 700 to 1000°C. 6 keV, 5E14 cm-2 BF2 implantation resulted in formation of continuous amorphous layers approximately 10 nm deep with a mean B penetration of approximately 7 nm. Conventional TEM analysis found the structures to be completely free of any spanning “hairpin” dislocations or stacking faults associated with the BF2 implant for all the annealing temperatures. For anneals between 700 °C and 900°C end of range damage formation resulted, but the size of the dislocation loops remained small. Annealing at 1000°C, 10 seconds showed no evidence of residual end of range damage. Location of the end of range damage region close to the free surface was found to decrease the thermal budget required for the removal of ion implantation induced radiation damage.

Special Aspects of High-Intensity Low-Energy Ion Implantation

2021 ◽  
Author(s):  
A. I. Ryabchikov ◽  
A. I. Ivanova ◽  
O. S. Korneva ◽  
D. O. Sivin
Keyword(s):  
Ion Implantation ◽  
High Intensity ◽  
Low Energy

scholarly journals Dose-rate effect of low-energy electron beam irradiation on bacterial content in chilled turkey

2021 ◽  
Vol 640 (3) ◽  
pp. 032006
Author(s):  
U A Bliznyuk ◽  
P Yu Borchegovskaya ◽  
A P Chernyaev ◽  
V S Ipatova ◽  
V A Leontiev ◽  
...  
Keyword(s):  
Electron Beam ◽  
Dose Rate ◽  
Electron Beam Irradiation ◽  
Rate Effect ◽  
Low Energy ◽  
Energy Electron ◽  
Beam Irradiation ◽  
Low Energy Electron ◽  
Bacterial Content ◽  
Dose Rate Effect

Big channeling effects at low-energy ion implantation in silicon

1986 ◽  
Vol 97 (2) ◽  
pp. K135-K139 ◽  
Author(s):  
J. Bollmann ◽  
H. Klose ◽  
A. Mertens
Keyword(s):  
Ion Implantation ◽  
Low Energy
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