ultrashallow junctions
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Defect Engineering for Ultrashallow Junctions using Surfaces

2019 ◽  
Vol 6 (1) ◽  
pp. 365-371
Author(s):  
Edmund G. Seebauer ◽  
Sai Hooi Yeong ◽  
M P Srinivasan ◽  
Charlotte Kwok ◽  
Ramakrishnan Vaidyanathan ◽  
...  
Keyword(s):  
Defect Engineering ◽  
Ultrashallow Junctions

Defect Engineering for Ultrashallow Junctions using Surfaces

2019 ◽  
Vol 13 (1) ◽  
pp. 55-62
Author(s):  
Edmund Seebauer ◽  
Charlotte Kwok ◽  
Ramakrishnan Vaidyanathan ◽  
Yevgeniy Kondratenko ◽  
S. H. Yeong ◽  
...  
Keyword(s):  
Defect Engineering ◽  
Ultrashallow Junctions

Anomalous rapid diffusion of phosphorus caused by heavily implanted carbon in pre-amorphized ultrashallow junctions

Vacuum ◽  
2017 ◽  
Vol 140 ◽  
pp. 161-164 ◽  
Author(s):  
Ruey-Dar Chang ◽  
Hsueh-Chun Liao ◽  
Chih-Ming Tai
Keyword(s):  
Ultrashallow Junctions ◽  
Rapid Diffusion

Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques

2013 ◽  
Vol 31 (3) ◽  
pp. 031403 ◽  
Author(s):  
Lakshmanan H. Vanamurthy ◽  
Mengbing Huang ◽  
Hassaram Bakhru ◽  
Toshiharu Furukawa ◽  
Nathaniel Berliner ◽  
...  
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Lattice Defects ◽  
Ultrashallow Junctions

(Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices

2012 ◽  
Vol 49 (1) ◽  
pp. 25-33 ◽  
Author(s):  
L. K. Nanver ◽  
A. Sammak ◽  
V. Mohammadi ◽  
K. R. C. Mok ◽  
L. Qi ◽  
...  
Keyword(s):  
Ultrashallow Junctions

Codiffusion of Phosphorus and Carbon in Preamorphized Ultrashallow Junctions

2012 ◽  
Vol 15 (6) ◽  
pp. H202 ◽  
Author(s):  
Y. T. Ling ◽  
M. J. Huang ◽  
R. D. Chang ◽  
L. Pelaz
Keyword(s):  
Ultrashallow Junctions

scholarly journals Low-Complexity Full-Melt Laser-Anneal Process for Fabrication of Low-Leakage Implanted Ultrashallow Junctions

2011 ◽  
Vol 40 (11) ◽  
pp. 2187-2196
Author(s):  
Cleber Biasotto ◽  
Viktor Gonda ◽  
Lis K. Nanver ◽  
Tom L.M. Scholtes ◽  
Johan van der Cingel ◽  
...  
Keyword(s):  
Low Complexity ◽  
Low Leakage ◽  
Ultrashallow Junctions ◽  
Laser Anneal

scholarly journals Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions

2010 ◽  
Vol 107 (12) ◽  
pp. 123711 ◽  
Author(s):  
Fabrice Severac ◽  
Fuccio Cristiano ◽  
Elena Bedel-Pereira ◽  
Pier Francesco Fazzini ◽  
Jonathan Boucher ◽  
...  
Keyword(s):  
Hole Mobility ◽  
High Dose ◽  
Mobility Degradation ◽  
Ultrashallow Junctions
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