Study of fluorine behavior in silicon by selective point defect injection

2005 ◽  
Vol 87 (1) ◽  
pp. 011902 ◽  
Author(s):  
M. N. Kham ◽  
H. A. W. El Mubarek ◽  
J. M. Bonar ◽  
P. Ashburn
Keyword(s):  
Point Defect ◽  
Defect Injection

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

Point Defect Injection Kinetics by N2O Oxidation of Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
C. Tsamis ◽  
D. N. Kouvatsos ◽  
D. Tsoukalas
Keyword(s):  
Point Defect ◽  
High Temperatures ◽  
Point Defects ◽  
Silicon Substrate ◽  
Oxidation Process ◽  
Stacking Faults ◽  
Defect Injection ◽  
Dry Oxidation ◽  
Kinetics Of

ABSTRACTThe influence of N2O oxidation of silicon on the kinetics of point defects at high temperatures is investigated. Oxidation Stacking Faults (OSF) are used to monitor the interstitials that are generated during the oxidation process. We show that at high temperatures (1050°-1150°C) the supersaturation of self-interstitials in the silicon substrate is enhanced when oxidation is performed in an N2O ambient compared to 100% dry oxidation. This behavior is attributed to the presence of nitrogen at the oxidizing interface. However, at lower temperatures this phenomenon is reversed and oxidation in N2O ambient leads to reduced supersaturation ratios.

Anomalous Point Defect Injection During Pulsed Laser Melting Processes: Direct Evidence of Gai and Asi Profiles in GaAs

1991 ◽  
Vol 230 ◽  
Author(s):  
Yih Chang ◽  
Thomas W. Sigmon
Keyword(s):  
Point Defect ◽  
Gaas Substrate ◽  
Direct Evidence ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Atomic Scale ◽  
Large Temperature ◽  
Laser Melting ◽  
Defect Injection ◽  
First Time

AbstractSignificant point defect injection during a pulsed laser melt process is reported for the first time. Heteroepitaxial InxGa1-xAs/GaAs layers fabricated by a pulsed laser induced epitaxy technique are used in this study. Transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) and secondary ion mass spectrometry (SIMS) are employed to study the redistribution behavior of each species on the atomic scale. It is found that both the Si dopant species and the Ga, As, and In host atoms are injected into the underlying GaAs substrate. These species are then significantly redistributed, forming near spherical As-rich regions. Direct evidence of Asi and Gai (Ga and As interstitialcies) profiles in the GaAs substrate are also obtained for the first time. A hypothesis, based upon the combined effects of concentration impulse and large temperature gradients across the liquid-solid interface, is proposed to explain the significant solid phase diffusion observed during the pulsed laser melting process. We estimate the temperature gradient induced electric field during the process to be on the order of 104V/cm.

Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing

2013 ◽  
Vol 11 (1) ◽  
pp. 16-19
Author(s):  
Evgeny Demenev ◽  
Florian Meirer ◽  
Zahi Essa ◽  
Damiano Giubertoni ◽  
Fuccio Cristiano ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defect ◽  
Low Energy ◽  
Defect Injection ◽  
Melt Annealing

Control of The Sb Redistribution in Strained SiGe Layers Using Point Defect Injection

1998 ◽  
Vol 510 ◽  
Author(s):  
A.Yu. Kuznetsovl ◽  
J. Cardenast ◽  
J.V. Grahnt ◽  
B.G. Svensson ◽  
A. Nylandsted Larsenl ◽  
...  
Keyword(s):  
Point Defect ◽  
Direct Injection ◽  
Silicon Layer ◽  
Strained Si ◽  
Defect Injection ◽  
Strained Sige

AbstractSb diffusion in strained Si1−xGex (x = 0.1 and 0.2) layers during nitridation (in NH3, 810 °C) and oxidation (in dry O2, 825 and 900 °C) of Si/Si1−xGex/Si heterostructures is measured and, subsequently, compared with that obtained for treatments in vacuum. An enhancement (ν) or retardation (η) of Sb diffusion in strained Si1−xGex after nitridation/oxidation anneals is detected. For example, 810 (NH3) and 900 °C (O2) anneals results in ν ∼ 2 and η ∼ 0.15 in strained Si0.9Ge0.1, respectively. The retardation of Sb diffusion is attributed to the injection of excess self-interstitials (I) and strongly indicating low interstitialcy fraction of Sb diffusion in strained Si1−xGex. The enhancement of Sb diffusion may be due to direct injection of vacancies (V), but only if the V diffusivities are significantly different in Si and Si1−xGex, or depletion of I in the strained Si1−xGex layers caused by the excess V concentration at the top surface of silicon layer

Enhanced Diffusion Following Point Defect Injection into B in SiGe and Si

2001 ◽  
Vol 194-199 ◽  
pp. 717-722
Author(s):  
Arthur F.W. Willoughby ◽  
Janet M. Bonar ◽  
Aihua Dan ◽  
Barry M. McGregor
Keyword(s):  
Point Defect ◽  
Enhanced Diffusion ◽  
Defect Injection

Furnace and Rta Injection of Point Defects into CVD-Grown B Doped Si and SiGe

2000 ◽  
Vol 610 ◽  
Author(s):  
Janet M. Bonar ◽  
Barry M. Mcgregor ◽  
Nick E. B. Cowern ◽  
Aihua Dan ◽  
Graham A. Cooke ◽  
...  
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Enhancement Factor ◽  
Rapid Thermal Anneal ◽  
Furnace Annealing ◽  
Vacancy Defects ◽  
Conventional Furnace ◽  
Interstitial Defects ◽  
Defect Injection ◽  
Sims Analysis

AbstractThe diffusion of B in Si and SiGe under the influence of point defect injection by Rapid Thermal Anneal (RTA) and conventional furnace anneal is studied in this work. B-doped regions in SiGe and Si were grown by LPCVD, and point defects were injected by RTA or furnace annealing bare, Si3N4 or SiO2 + Si3N4 covered samples in an oxygen atmosphere. Self-interstitial defects will be injected into bare Si while vacancy defects will be injected into Si3N4 covered samples, and inert annealing will occur in SiO2 + Si3N4 covered samples. The annealed and asgrown profiles were determined using SIMS analysis, and the diffusivities extracted by direct comparison of the profiles. Both interstitials and vacancies were injected during furnace annealing of SiGe, as demonstrated by the respective enhancement and retardation of the B diffusion. Enhanced B diffusion in SiGe was observed even for 5 s RTA at 1000°C, with an enhancement factor of ∼2.5. The B in Si diffusivity enhancement for interstitial injection by RTA oxidation was found to be a factor of ∼3 compared to inert anneals, close to the factor for SiGe.

ANTIMONY DIFFUSION IN SILICON GEMANIUM ALLOYS UNDER POINT DEFECT INJECTION

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4195-4198 ◽  
Author(s):  
AIHUA DAN ◽  
ARTHUR F. W. WILLOUGHBY ◽  
JANET M. BONAR ◽  
BARRY M. MCGREGOR ◽  
MARK G. DOWSETT ◽  
...  
Keyword(s):  
Point Defect ◽  
Computer Simulations ◽  
Point Defects ◽  
Silicon Germanium ◽  
Oxygen Atmosphere ◽  
Epitaxial Layers ◽  
Rapid Thermal Anneal ◽  
Strained Si ◽  
Defect Injection

Antimony diffusion in in-situ doped strained Si 0.9 Ge 0.1 epitaxial layers, subjected to point defects injection by rapid thermal anneal in oxygen atmosphere, was investigated as a function of temperature at range from 890°C to 1000°C. In this work, the effect of point defect injection on the diffusion of antimony in silicon and silicon-germanium alloys has confirmed the predominant mechanism for diffusion of Sb in Si and SiGe to be vacancy mediated. Diffusivities were obtained using computer simulations. Activation energies were calculated while the diffusivity of antinomy in SiGe under point defect injection as a function of temperature was presented.

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