Point Defect Injection Kinetics by N2O Oxidation of Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
C. Tsamis ◽  
D. N. Kouvatsos ◽  
D. Tsoukalas
Keyword(s):  
Point Defect ◽  
High Temperatures ◽  
Point Defects ◽  
Silicon Substrate ◽  
Oxidation Process ◽  
Stacking Faults ◽  
Defect Injection ◽  
Dry Oxidation ◽  
Kinetics Of

ABSTRACTThe influence of N2O oxidation of silicon on the kinetics of point defects at high temperatures is investigated. Oxidation Stacking Faults (OSF) are used to monitor the interstitials that are generated during the oxidation process. We show that at high temperatures (1050°-1150°C) the supersaturation of self-interstitials in the silicon substrate is enhanced when oxidation is performed in an N2O ambient compared to 100% dry oxidation. This behavior is attributed to the presence of nitrogen at the oxidizing interface. However, at lower temperatures this phenomenon is reversed and oxidation in N2O ambient leads to reduced supersaturation ratios.

The stress-driven redistribution of point defects in the vicinity of crack-like singularities

1990 ◽  
Vol 427 (1872) ◽  
pp. 1-23 ◽  
Keyword(s):  
Steady State ◽  
Stress Field ◽  
Grain Boundary ◽  
Point Defect ◽  
Slip Band ◽  
Point Defects ◽  
Elastic Interaction ◽  
Mode Ii ◽  
Fracture Of Materials ◽  
Kinetics Of

The most important term in the energy of the elastic interaction between a crack and a point defect is presented and used to estimate the kinetics of redistribution of point defects in the stress field of an isolated crack under mode II load and a slip band impinging against a grain boundary sink. Our analyses show that the point defects should migrate only to the tip of the crack, whereas they should enter both into the slip band tip and along the adjacent boundary interface. Explicit results are obtained for the concentrations, the number and flux distributions as well as the total numbers segregated in the transient depletion and the steady-state irradiation situation and serve to reinforce previous conclusions regarding the importance of such stress-driven processes in the fracture of materials.

Furnace and Rta Injection of Point Defects into CVD-Grown B Doped Si and SiGe

2000 ◽  
Vol 610 ◽  
Author(s):  
Janet M. Bonar ◽  
Barry M. Mcgregor ◽  
Nick E. B. Cowern ◽  
Aihua Dan ◽  
Graham A. Cooke ◽  
...  
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Enhancement Factor ◽  
Rapid Thermal Anneal ◽  
Furnace Annealing ◽  
Vacancy Defects ◽  
Conventional Furnace ◽  
Interstitial Defects ◽  
Defect Injection ◽  
Sims Analysis

AbstractThe diffusion of B in Si and SiGe under the influence of point defect injection by Rapid Thermal Anneal (RTA) and conventional furnace anneal is studied in this work. B-doped regions in SiGe and Si were grown by LPCVD, and point defects were injected by RTA or furnace annealing bare, Si3N4 or SiO2 + Si3N4 covered samples in an oxygen atmosphere. Self-interstitial defects will be injected into bare Si while vacancy defects will be injected into Si3N4 covered samples, and inert annealing will occur in SiO2 + Si3N4 covered samples. The annealed and asgrown profiles were determined using SIMS analysis, and the diffusivities extracted by direct comparison of the profiles. Both interstitials and vacancies were injected during furnace annealing of SiGe, as demonstrated by the respective enhancement and retardation of the B diffusion. Enhanced B diffusion in SiGe was observed even for 5 s RTA at 1000°C, with an enhancement factor of ∼2.5. The B in Si diffusivity enhancement for interstitial injection by RTA oxidation was found to be a factor of ∼3 compared to inert anneals, close to the factor for SiGe.

ANTIMONY DIFFUSION IN SILICON GEMANIUM ALLOYS UNDER POINT DEFECT INJECTION

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4195-4198 ◽  
Author(s):  
AIHUA DAN ◽  
ARTHUR F. W. WILLOUGHBY ◽  
JANET M. BONAR ◽  
BARRY M. MCGREGOR ◽  
MARK G. DOWSETT ◽  
...  
Keyword(s):  
Point Defect ◽  
Computer Simulations ◽  
Point Defects ◽  
Silicon Germanium ◽  
Oxygen Atmosphere ◽  
Epitaxial Layers ◽  
Rapid Thermal Anneal ◽  
Strained Si ◽  
Defect Injection

Antimony diffusion in in-situ doped strained Si 0.9 Ge 0.1 epitaxial layers, subjected to point defects injection by rapid thermal anneal in oxygen atmosphere, was investigated as a function of temperature at range from 890°C to 1000°C. In this work, the effect of point defect injection on the diffusion of antimony in silicon and silicon-germanium alloys has confirmed the predominant mechanism for diffusion of Sb in Si and SiGe to be vacancy mediated. Diffusivities were obtained using computer simulations. Activation energies were calculated while the diffusivity of antinomy in SiGe under point defect injection as a function of temperature was presented.

Injection of point defects by oxidation of AlGaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
Danielle R. Chamberlin ◽  
Scott A. McHugo ◽  
Dariusz Burak ◽  
Deyon Burke ◽  
Tim Osentowski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Point Defect ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Published Data ◽  
Group Iii ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Order Of Magnitude ◽  
Pl Emission

AbstractInjection of point defects into GaAs/AlxGa1-xAs heterostructures by oxidation of AlxGa1-xAs is investigated. The blueshift of the PL emission from GaAs quantum wells is measured as a function of rapid thermal annealing conditions in as-grown and thermally oxidized samples. Contrary to published data for point defect injection by oxidation of GaAs, oxidation of AlxGa1-xAs appears to reduce the interdiffusion of the quantum wells. The PL peak shifts after annealing have been fit assuming Al diffusion in the quantum wells and solving the singleparticle Schrödinger equation. These fits show a reduction in group-III diffusivity of over an order of magnitude with an oxidized layer of AlxGa1-xAs on the surface.

Electron Paramagnetic Resonance in Semiconductors

1980 ◽  
Vol 2 ◽  
Author(s):  
James W. Corbett ◽  
Richard L. Kleinhenz ◽  
Neal D. Wilsey
Keyword(s):  
Heat Treatment ◽  
Electron Paramagnetic Resonance ◽  
High Temperatures ◽  
Point Defects ◽  
Stacking Faults ◽  
Group Iv ◽  
Paramagnetic Resonance ◽  
Future Studies ◽  
Defects In Semiconductors ◽  
Electron Paramagnetic

ABSTRACTThe use of electron paramagnetic resonance (EPR) in the study of defects in semiconductors is briefly reviewed, including group IV (C-diamond, Si, Ge, SiC), III-V (AlSb, GaAs, GaSb, GaP, InAs, InP, InSb), II-VI (BaO, BaS, BeO, CaO, CaS, CaSe, CdO, CdS, CdSe, CdTe, MgO, SrO, SrS, ZnO, ZnS, ZnSe, ZnTe) and miscellaneous svstems. The identification of defects via EPR is described as is the exploitation of that identification as a tool in future studies. Particular attention is paid to Si, where is emerging an integrated panorama of identified defects ranging from point defects to aggregates through intermediate defect configurations (as discussed by Tan) to dislocations and stacking faults; EPR results in Si as a testing ground for the theory of shallow donors, in the understanding of diffusion at high temperatures and in the study of heat-treatment defects are discussed as examples of the use of EPR as a tool in defect studies.

Study of Point Defect Concentrations During the Fluorinated Oxidation of Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
R. J. Jaccodine ◽  
U. S. Kim
Keyword(s):  
Point Defect ◽  
Oxidation Process ◽  
Active Regions ◽  
Experimental Conditions ◽  
Active Point ◽  
Dry Oxidation ◽  
Lower Activation ◽  
Specific Impurity ◽  
Dominant Influence

ABSTRACTSome of our most important and quantitative insights on intrinsic point defects have been established as a result of the study of the influence of oxidation on their “excess” concentrations. From study of the growth and shrinkage of oxidation induced stacking faults (OSF) and from oxidation enhanced or retarded diffusion (OED-ORD) the fractional contribution of self-interstitials and vacancies can be assessed. The dominant influence on relatively thin dry or wet oxides is that of the injection of self-interstitials away from the oxidizing interface into the bulk crystal. These self-interstitials have been variously attributed to the incompleteness of oxidation or interracial stress and relaxation at the Si-SiO2 interface. We have studied the role of fluorine additives (ppm) to the dry oxidation process. This paper will discuss similar oxidation-related phenomena (OSF, OED, and ORD), confirming that under our experimental conditions with normally dry oxidation plus fluorine the active point defect injection consists mainly of “excess” vacancies. OSF anneal at lower temperatures than with nitridation processes and with a lower activation energy (1.7 eV). The study of P,B,As, Sb oxidation enhances-retarded diffusions validates the conclusion, with P,B yielding ORD instead of OED and Sb being enhanced rather than retarded as in normal oxidation. Oxidation-induced diffusion experiments not only explored the role of the specific impurity (P,B,As,Sb) but also utilized specimens with four adjacent active regions (bare Si, oxide covered Si, nitride covered Si, and the normal control oxide covered by nitride). The ratios of Ci/Ci* and Cv/Cv* for fluorine addition will be contrasted with those formed by dry oxidation.

Antimony and Boron Diffusion in Silicon and Silicon Germanium under the Influence of Point Defects Injection by Rapid Thermal Anneal

2001 ◽  
Vol 669 ◽  
Author(s):  
Aihua Dan ◽  
Arthur F. W. Willoughby ◽  
Janet M. Bonar ◽  
Barry M. McGregor ◽  
Mark G. Dowsett ◽  
...  
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Silicon Germanium ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Time ◽  
Injection Technique ◽  
Boron Diffusion ◽  
Rapid Thermal Anneal ◽  
Vacancy Defects ◽  
Defect Injection

ABSTRACTThe effect of point defect injection on the diffusion of antimony and boron in silicon and silicon-germanium alloys has been studied by comparison of inert with injection diffusions. In this work, Sb and B in Si were used as control wafers to investigate Sb and B diffusion behavior in Si0.9Ge0.1. The point defect injection technique was carried out by rapid thermal annealing (RTA) Sb and B in Si and Si0.9Ge0.1 samples with the various surface coatings in either oxygen or ammonia atmospheres to inject either interstitial or vacancy defects. The diffusion profiles for as-grown and RTA annealed samples were measured by Secondary Ion Mass Spectrometry (SIMS). Diffusivities for B in Si and Si0.9Ge0.1 were obtained using computer simulations of the measured boron profiles for their annealed samples. Sb diffusion in Si and Si0.9Ge0.1 was found enhanced by vacancy injection and retarded by interstitial injection. The enhanced B diffusion in Si and Si0.9Ge0.1 was found by interstitial injection. These results confirm that Sb diffusion in Si0.9Ge0.1 is primarily dominated by vacancy-mediated mechanism, while B diffuses in Si0.9Ge0.1 by an interstitially mediated mechanism. The effect of the RTA diffusion time on the B diffusion in Si and Si0.9Ge0.1 has also been investigated. The diffusivity versus diffusion time of B in Si and Si0.9Ge0.1 for inert and injection samples is presented. It was found that the shorter annealing time had the faster diffusion. This suggested that it caused by transient diffusion effect arising from point defects.

Detection of a point defect in a silicon single crystal by high-resolution TEM

1995 ◽  
Vol 53 ◽  
pp. 466-467
Author(s):  
M. Awaji
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Point Defect ◽  
Point Defects ◽  
Noise Level ◽  
Dark Field ◽  
Silicon Single Crystal ◽  
High Resolution Image ◽  
Dark Field Imaging ◽  
Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

scholarly journals The combustion of aromatic and alicyclic hydrocarbons. II. The ignition of aromatic hydrocarbons at high temperatures

1939 ◽  
Vol 171 (946) ◽  
pp. 421-433 ◽  
Keyword(s):  
High Temperatures ◽  
Aromatic Hydrocarbons ◽  
Isothermal Oxidation ◽  
Present Communication ◽  
Temperature Range ◽  
Benzene Toluene ◽  
The Subject ◽  
Kinetics Of

In the first paper of this series (Burgoyne 1937) the kinetics of the isothermal oxidation above 400° C of several aromatic hydrocarbons was studied. The present communication extends this work to include the phenomena of ignition in the same temperature range, whilst the corresponding reactions below 400° C form the subject of further investigations now in progress. The hydrocarbons at present under consideration are benzene, toluene, ethylbenzene, n -propylbenzene, o-, m - and p -xylenes and mesitylene.

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